Formation of dendrite domain structures in stoichiometric lithium niobate at elevated temperatures / Shur V. Ya.,Chezganov D. S.,Nebogatikov M. S.,Baturin I. S.,Neradovskiy M. M. // JOURNAL OF APPLIED PHYSICS. - 2012. - V. 112, l. 10.

ISSN/EISSN:
0021-8979 / 1089-7550
Type:
Article
Abstract:
Formation of the dendrite-type self-organized domain structures during polarization reversal at elevated temperatures (above 230 degrees C) has been revealed and studied in stoichiometric lithium niobate LiNbO3 single crystals. Optical, confocal Raman, scanning electron, and piezoelectric force microscopy have been used for domain visualization. It has been shown experimentally that formation of the dendrite-like structures has been attributed to correlated nucleation caused by a field distribution in the vicinity of the charged domain walls. (C) 2012 American Institute of Physics. {[}http://dx.doi.org/10.1063/1.4766308]
Author keywords:
LINBO3 CRYSTALS; FERROELECTRIC DOMAINS; SINGLE-CRYSTALS; NANOSCALE; CONGRUENT; EVOLUTION; LITAO3; VISUALIZATION; DEVICES
DOI:
10.1063/1.4766308
Web of Science ID:
ISI:000311969800111
Соавторы в МНС:
Другие поля
Поле Значение
Month NOV 15
Publisher AMER INST PHYSICS
Address CIRCULATION \& FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
Language English
Article-Number 104113
EISSN 1089-7550
Keywords-Plus LINBO3 CRYSTALS; FERROELECTRIC DOMAINS; SINGLE-CRYSTALS; NANOSCALE; CONGRUENT; EVOLUTION; LITAO3; VISUALIZATION; DEVICES
Research-Areas Physics
Web-of-Science-Categories Physics, Applied
Author-Email vladimir.shur@usu.ru
ResearcherID-Numbers Chezganov, Dmitry/K-6479-2015 Baturin, Ivan/B-1164-2008 Shur, Vladimir/J-9078-2015
ORCID-Numbers Chezganov, Dmitry/0000-0001-8696-262X Baturin, Ivan/0000-0002-7033-6103
Funding-Acknowledgement RFBR {[}10-02-96042-r-Ural-a, 10-02-00627-a, 11-02-91066-CNRS-a]; Ministry of Education and Science {[}16.552 11 7020]; OPTEC LLC; Ural Federal University
Funding-Text The equipment of the Ural Center for Shared Use ``Modern Nanotechnology{''
Number-of-Cited-References 36
Usage-Count-Since-2013 51
Journal-ISO J. Appl. Phys.
Doc-Delivery-Number 049GF