New approach to analysis of the switching current data in ferroelectric thin films / Shur VY,Baturin IS,Shishkin EI,Belousova MV // FERROELECTRICS. - 2003. - V. 291, l. . - P. 27-35.

ISSN/EISSN:

0015-0193 / 1563-5112

Type:

Article; Proceedings Paper

Abstract:

A new approach to analysis of the switching current allows to extract distribution function of the threshold field from the current data recorded during conventional hysteresis loop measurements. Quasi-static switching (domain kinetics in slow-increasing field) in spatially inhomogeneous ferroelectric was investigated by computer simulation. Domain arising ({''}nucleation{''}) and growth was considered under the assumption that the threshold field for appearance of isolated nuclei is essentially higher than for nuclei at the domain wall. The obtained complicated relation between switching current shape and the threshold field distribution function essentially differs from predictions of Preisach approach. The new method has been successively used for analysis of the switching current data measured during cycling in PLZT thin films.

Author keywords:

switching current; thin films; Preisach approach; internal bias field KINETIC APPROACH

DOI:

10.1080/00150190390222510

Web of Science ID:

ISI:000185296200005

Соавторы в МНС:

Другие поля

Поле	Значение
Note	7th International Symposium on Ferroic Domains and Mesoscopic Structures (ISFD7), GIENS, FRANCE, SEP, 2002
Publisher	TAYLOR \& FRANCIS LTD
Address	2-4 PARK SQUARE, MILTON PARK, ABINGDON OR14 4RN, OXON, ENGLAND
Language	English
EISSN	1563-5112
Keywords-Plus	KINETIC APPROACH
Research-Areas	Materials Science; Physics
Web-of-Science-Categories	Materials Science, Multidisciplinary; Physics, Condensed Matter
ResearcherID-Numbers	Baturin, Ivan/B-1164-2008 Shur, Vladimir/J-9078-2015
ORCID-Numbers	Baturin, Ivan/0000-0002-7033-6103
Number-of-Cited-References	15
Usage-Count-Since-2013	6
Journal-ISO	Ferroelectrics
Doc-Delivery-Number	721BB