Fe20Ni80/Fe50Mn50 film magnetoresistive medium / Vas'kovskiy V. O.,Lepalovskij V. N.,Gor'kovenko A. N.,Kulesh N. A.,Savin P. A.,Svalov A. V.,Stepanova E. A.,Shchegoleva N. N.,Yuvchenko A. A. // TECHNICAL PHYSICS. - 2015. - V. 60, l. 1. - P. 116-122.

ISSN/EISSN:
1063-7842 / 1090-6525
Type:
Article
Abstract:
The influence of several physico-technological factors on the microstructure and the magnetic and magnetoresistive properties of film structures based on Fe20Ni80/Fe50Mn50 bilayers with exchange (magnetic) bias is investigated. The dependences of the magnetic bias, coercive force, and anisotropic magnetoresistance on the deposition sequence and thickness of layers in the structures, substrate temperature, annealing temperature, and measurement temperature are determined for films obtained by magnetron sputtering, including with a high-frequency electric bias applied to the substrate. It is shown that the film SiO2/Ta(5)/Fe20Ni80(5)/Fe50Mn50(20)/Fe20Ni80(40)/Ta(5) structure offers an optimal combination of properties as a magnetoresistive medium with internal magnetic bias. Testing data for magnetic sensors made of this material by optical lithography are presented.
Author keywords:
BIAS
DOI:
10.1134/S1063784215010260
Web of Science ID:
ISI:000348379900019
Соавторы в МНС:
Другие поля
Поле Значение
Month JAN
Publisher MAIK NAUKA/INTERPERIODICA/SPRINGER
Address 233 SPRING ST, NEW YORK, NY 10013-1578 USA
Language English
EISSN 1090-6525
Keywords-Plus BIAS
Research-Areas Physics
Web-of-Science-Categories Physics, Applied
Author-Email vladimir.lepalovsky@urfu.ru
ResearcherID-Numbers Kulesh, Nikita/C-2922-2014 Gorkovenko, Aleksandr/M-3876-2016 Svalov, Andrey/M-4519-2016 Щеголева, Нина/B-6589-2017
ORCID-Numbers Kulesh, Nikita/0000-0001-7046-2671 Gorkovenko, Aleksandr/0000-0001-8758-9046 Svalov, Andrey/0000-0002-4549-8282 Shchegoleva, Nina/0000-0002-3229-9444
Funding-Acknowledgement Ministry of Education and Science {[}02.G36.31.0004]
Funding-Text This work was supported by the Ministry of Education and Science, contract no. 02.G36.31.0004.
Number-of-Cited-References 11
Usage-Count-Last-180-days 1
Usage-Count-Since-2013 19
Journal-ISO Tech. Phys.
Doc-Delivery-Number AZ7DX