High frequency and magnetoelectrical properties of magnetoresistive memory element based on FeCoNi/TiN/FeCoNi film / Kurlyandskaya GV,Barandiaran JM,Garcia-Miquel H,Vazquez M,Vas'kovskiy VO,Svalov AV // BOLETIN DE LA SOCIEDAD ESPANOLA DE CERAMICA Y VIDRIO. - 2000. - V. 39, l. 4. - P. 581-583.

ISSN/EISSN:

0366-3175 / нет данных

Type:

Article

Abstract:

A miniaturised memory device for information recording and readout processes have been designed on the basis of anisotropic magnetoresistive effect in Fe15Co20Ni65(160 Angstrom) / TiN(50 Angstrom)/ Fe15Co20Ni65(160 Angstrom) three-layered film done by rf diode sputtering. Stable recording and readout processes were available for 32 rectangular element column, where each element had mu m dimensions convenient to fabricate memory chip with 10(6) bits capacity. Rectangles of different sizes with removed corners were used in order to define the geometry of most of all stable recording and readout processes. Magnetoresistance and magnetoimpedance effects of a magnetic memory device have been comparatively analysed. We suggest that the decrease of the absolute value of the magnetoimpedance of the memory device comes from the reduction of the real part via the magnetoresistance.

Author keywords:

thin film; magnetic memory; magnetoresistance; magnetoimpedance MAGNETO-IMPEDANCE

DOI:

нет данных

Web of Science ID:

ISI:000088543200039

Соавторы в МНС:

Другие поля

Поле	Значение
Month	JUL-AUG
Publisher	SOC ESPANOLA CERAMICA VIDRIO
Address	DESPACHO 176, INST CERAMICA VIDRIO, CSIC, C-KELSEN 5, 28049 MADRID, SPAIN
Language	English
Keywords-Plus	MAGNETO-IMPEDANCE
Research-Areas	Materials Science
Web-of-Science-Categories	Materials Science, Ceramics
ResearcherID-Numbers	GARCIA-MIQUEL, HECTOR/C-6178-2016
ORCID-Numbers	GARCIA-MIQUEL, HECTOR/0000-0003-4985-9329
Number-of-Cited-References	9
Usage-Count-Since-2013	1
Journal-ISO	Bol. Soc. Esp. Ceram. Vidr.
Doc-Delivery-Number	340PJ