Mechanism of quantum dot luminescence excitation within implanted SiO2:Si:C films / Zatsepin A. F.,Buntov E. A.,Kortov V. S.,Tetelbaum D. I.,Mikhaylov A. N.,Belov A. I. // JOURNAL OF PHYSICS-CONDENSED MATTER. - 2012. - V. 24, l. 4.

ISSN/EISSN:

0953-8984 / нет данных

Type:

Article

Abstract:

Results of the investigation of photoluminescence (PL) mechanisms for silicon dioxide films implanted with ions of silicon (100 keV; 7 x 10(16) cm(-2)) and carbon (50 keV; 7 x 10(15)-1.5 x 10(17) cm(-2)) are presented. The spectral, kinetic and thermal activation properties of the quantum dots (Si, C and SiC) formed by a subsequent annealing were studied by means of time-resolved luminescence spectroscopy under selective synchrotron radiation excitation. Independent quantum dot PL excitation channels involving energy transfer from the SiO2 matrix point defects and excitons were discovered. A resonant mechanism of the energy transfer from the matrix point defects (E' and ODC) is shown to provide the fastest PL decay of nanosecond order. The critical distances (6-9 nm) of energy transport between the bulk defects and nanoclusters were determined in terms of the Inokuti-Hirayama model. An exchange interaction mechanism is realized between the surface defects (E-s'-centres) and the luminescent nanoparticles. The peculiarities of an anomalous PL temperature dependence are explained in terms of a nonradiative energy transfer from the matrix excitons. It is established that resonant transfer to the luminescence centre triplet state is realized in the case of self-trapped excitons. In contrast, the PL excitation via free excitons includes the stages of energy transfer to the singlet state, thermally activated singlet-triplet conversion and radiative recombination.

Author keywords:

AMORPHOUS-SILICON DIOXIDE; POROUS SILICON; OPTICAL-PROPERTIES; SI NANOCRYSTALS; ION-IMPLANTATION; PHOTOLUMINESCENCE; CENTERS; ENERGY; CARBON; EMISSION

DOI:

10.1088/0953-8984/24/4/045301

Web of Science ID:

ISI:000299326100007

Соавторы в МНС:

Другие поля

Поле	Значение
Month	FEB 1
Publisher	IOP PUBLISHING LTD
Address	TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND
Language	English
Article-Number	045301
Keywords-Plus	AMORPHOUS-SILICON DIOXIDE; POROUS SILICON; OPTICAL-PROPERTIES; SI NANOCRYSTALS; ION-IMPLANTATION; PHOTOLUMINESCENCE; CENTERS; ENERGY; CARBON; EMISSION
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
Author-Email	zats@dpt.ustu.ru
ResearcherID-Numbers	Mikhaylov, Alexey/C-7077-2011 Zatsepin, Anatoly/L-7335-2016 Tetelbaum, David/D-1353-2011 Belov, Alexey/C-3020-2014 Buntov, Evgeny/F-8760-2010
ORCID-Numbers	Mikhaylov, Alexey/0000-0001-5505-7352 Zatsepin, Anatoly/0000-0001-9539-2403 Tetelbaum, David/0000-0001-5505-7352 Belov, Alexey/0000-0002-1222-7769 Buntov, Evgeny/0000-0003-3255-9039
Number-of-Cited-References	59
Usage-Count-Last-180-days	3
Usage-Count-Since-2013	37
Journal-ISO	J. Phys.-Condes. Matter
Doc-Delivery-Number	879JS