Electrical properties of (PbS)(0.59)TiS2 crystals at high pressures up to 20 GPa / Shchennikov VV,Titov AN,Popova SV,Ovsyannikov SV // HIGH PRESSURE RESEARCH. - 2000. - V. 17, l. 3-6. - P. 347-353.

ISSN/EISSN:

0895-7959 / нет данных

Type:

Article

Abstract:

The measurements of thermoelectric power S and resistance rho at high pressure synthetic diamond anvils cell were performed for (PbS)(0.59)TiS2 and TiS2 crystals. The phase transition was found at P approximate to 2 GPa accompanied by descend of rho and \textbackslash{}S\textbackslash{} for (PbS)(0.59)TiS2 This transition is connected with structural change of PbS fragment from pseudocubic cell to orthorombic one and as consequence, with change of the electron concentration in TiS2-layers. From the electronic structure calculations for TiS2, the semiconductor-metal transition occurs at pressure P greater than or equal to 4 GPa. Experimentally at this pressure range the decrease of rho (P) was observed for (PbS)(0.59)TiS2 crystals.

Author keywords:

electrical resistance; thermoEMF; misfit crystals; high pressure; phase transition SEMIMETAL TRANSITION; SEMICONDUCTOR; TIS2

DOI:

10.1080/08957950008245923

Web of Science ID:

ISI:000089805100023

Соавторы в МНС:

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Другие поля

Поле	Значение
Publisher	GORDON BREACH SCI PUBL LTD
Address	C/O STBS LTD, PO BOX 90, READING RG1 8JL, BERKS, ENGLAND
Language	English
Keywords-Plus	SEMIMETAL TRANSITION; SEMICONDUCTOR; TIS2
Research-Areas	Physics
Web-of-Science-Categories	Physics, Multidisciplinary
ResearcherID-Numbers	Gudina, Svetlana/J-9729-2013 Titov, Alexander/K-4328-2013 Ovsyannikov, Sergey/J-7802-2012 Shchennikov, Vladimir/J-8533-2013
ORCID-Numbers	Gudina, Svetlana/0000-0002-7217-5593 Titov, Alexander/0000-0003-3636-2604 Ovsyannikov, Sergey/0000-0003-1027-0998 Shchennikov, Vladimir/0000-0003-2887-1652
Number-of-Cited-References	19
Usage-Count-Since-2013	11
Journal-ISO	High Pressure Res.
Doc-Delivery-Number	362YD