Influence of the composition on the electrical properties of amorphous chalcogenides AgGe1+x As1-x S-3 / Kheifets O. L.,Shakirov E. F.,Melnikova N. V.,Filippov A. L.,Nugaeva L. L. // SEMICONDUCTORS. - 2012. - V. 46, l. 7. - P. 943-947.

ISSN/EISSN:

1063-7826 / нет данных

Type:

Article

Abstract:

This article is devoted to the synthesis and examination of the electrical properties of amorphous chalcogenides AgGe1 + x As1 - x S-3 (x = 0.1, 0.4-0.6, 0.9) at low temperatures. The studies are performed in order to obtain materials with improved characteristics (an increase in the fraction of the ionic transfer, a decrease in the temperatures of its emergence, and an increase in conductivity). The synthesized compounds are electron-ion conductors. An increase in the Ge fraction leads to an increase in the temperature corresponding to the onset of ionic transport and to a decrease in conductivity.

Author keywords:

IONIC-CONDUCTIVITY

DOI:

10.1134/S1063782612070123

Web of Science ID:

ISI:000306064300016

Соавторы в МНС:

Другие поля

Поле	Значение
Month	JUL
Publisher	MAIK NAUKA/INTERPERIODICA/SPRINGER
Address	233 SPRING ST, NEW YORK, NY 10013-1578 USA
Language	English
Keywords-Plus	IONIC-CONDUCTIVITY
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
Author-Email	olga.kobeleva@usu.ru
ResearcherID-Numbers	Melnikova, Nina/B-1601-2014
Funding-Acknowledgement	Federal Targeted Program
Funding-Text	This study was supported in part by the Federal Targeted Program ``Scientific and Scientific-and-Pedagogical Staff of Innovative Russia{''} for 2009-2013.
Number-of-Cited-References	6
Usage-Count-Last-180-days	2
Usage-Count-Since-2013	34
Journal-ISO	Semiconductors
Doc-Delivery-Number	969OF