Ferroelectric domain triggers the charge modulation in semiconductors (invited) / Morozovska Anna N.,Eliseev Eugene A.,Ievlev Anton V.,Varenyk Olexander V.,Pusenkova Anastasiia S.,Chu Ying-Hao,Shur Vladimir Ya,Strikha Maksym V.,Kalinin Sergei V. // JOURNAL OF APPLIED PHYSICS. - 2014. - V. 116, l. 6.

ISSN/EISSN:

0021-8979 / 1089-7550

Type:

Article

Abstract:

We consider a typical heterostructure ``domain patterned ferroelectric film-ultra-thin dielectric layer-semiconductor,{''} where the semiconductor can be an electrolyte, paraelectric or multi-layered graphene. Unexpectedly, we have found that the space charge modulation profile and amplitude in the semiconductor, that screens the spontaneous polarization of a 180-deg domain structure of ferroelectric, depends on the domain structure period, dielectric layer thickness and semiconductor screening radius in a rather non-trivial nonlinear way. Multiple size effects appearance and manifestation are defined by the relationship between these three parameters. In addition, we show that the concept of effective gap can be introduced in a simple way only for a single-domain limit. Obtained analytical results open the way for understanding of current-AFM maps of contaminated ferroelectric surfaces in ambient atmosphere as well as explore the possibilities of conductivity control in ultra-thin semiconductor layers. (C) 2014 AIP Publishing LLC.

Author keywords:

DEVICES; FILMS

DOI:

10.1063/1.4891310

Web of Science ID:

ISI:000341179400095

Соавторы в МНС:

Другие поля

Поле	Значение
Month	AUG 14
Publisher	AMER INST PHYSICS
Address	1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
Language	English
Article-Number	066817
EISSN	1089-7550
Keywords-Plus	DEVICES; FILMS
Research-Areas	Physics
Web-of-Science-Categories	Physics, Applied
Author-Email	vladimir.shur@urfu.ru maksym\_strikha@hotmail.com sergei2@ornl.gov
ResearcherID-Numbers	Kalinin, Sergei/I-9096-2012 Ievlev, Anton/H-3678-2012 Ying-Hao, Chu/A-4204-2008 Shur, Vladimir/J-9078-2015
ORCID-Numbers	Kalinin, Sergei/0000-0001-5354-6152 Strikha, Maksym/0000-0002-2380-0305 Ievlev, Anton/0000-0003-3645-0508 Ying-Hao, Chu/0000-0002-3435-9084
Funding-Acknowledgement	bilateral SFFR-NSF project (U.S. National Science Foundation) {[}NSF-DMR-1210588]; bilateral SFFR-NSF project (State Fund of Fundamental Research of Ukraine) {[}UU48/002]; National Academy of Sciences of Ukraine {[}35-02-14]; State Fund of Fundamental Research of Ukraine {[}53.2/006]; Oak Ridge National Laboratory by the Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy; Russian Foundation of Basic Research {[}14-02-92709 Ind-a]
Funding-Text	A.N.M. and E. A. E. acknowledge the support via bilateral SFFR-NSF project (U.S. National Science Foundation under NSF-DMR-1210588 and State Fund of Fundamental Research of Ukraine, Grant No. UU48/002) and National Academy of Sciences of Ukraine (Grant No. 35-02-14). M. V. S. acknowledges State Fund of Fundamental Research of Ukraine, Grant No. 53.2/006. The part of research (A. V. I. and S. V. K.) was conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy. S. V. K. acknowledges Office of Basic Energy Sciences, U.S. Department of Energy. Y.H.C acknowledge the National Science Council, R.O.C. (NSC-101-2119-M-009-003-MY2), Ministry of Education (MOE-ATU 101W961), and Center for Interdisciplinary Science of National Chiao Tung University. V.Y.S. acknowledges the Russian Foundation of Basic Research (Grant No. 14-02-92709 Ind-a).
Number-of-Cited-References	46
Usage-Count-Last-180-days	1
Usage-Count-Since-2013	35
Journal-ISO	J. Appl. Phys.
Doc-Delivery-Number	AO2TR