Ionic field effect and memristive phenomena in single-point ferroelectric domain switching / Ievlev Anton V.,Morozovska Anna N.,Eliseev Eugene A.,Shur Vladimir Ya,Kalinin Sergei V. // NATURE COMMUNICATIONS. - 2014. - V. 5, l. .

ISSN/EISSN:
2041-1723 / нет данных
Type:
Article
Abstract:
Electric field-induced polarization switching underpins most functional applications of ferroelectric materials in information technology, materials science and optoelectronics. Recently, much attention has been focused on the switching of individual domains using scanning probe microscopy. The classical picture of tip-induced switching, including formation of cylindrical domains with size, is largely determined by the field distribution and domain wall motion kinetics. The polarization screening is recognized as a necessary precondition to the stability of ferroelectric phase; however, screening processes are generally considered to be uniformly efficient and not leading to changes in switching behaviour. Here we demonstrate that single-point tip-induced polarization switching can give rise to a surprisingly broad range of domain morphologies, including radial and angular instabilities. These behaviours are traced to the surface screening charge dynamics, which in some cases can even give rise to anomalous switching against the electric field (ionic field effect).
Author keywords:
NONLINEAR DIELECTRIC MICROSCOPY; SCANNING FORCE MICROSCOPY; THIN-FILMS; NANOSCALE; POLARIZATION; SPINTRONICS; ELECTRONICS; CRYSTAL; SYSTEMS; PHYSICS
DOI:
10.1038/ncomms5545
Web of Science ID:
ISI:000340626500001
Соавторы в МНС:
Другие поля
Поле Значение
Month JUL
Publisher NATURE PUBLISHING GROUP
Address MACMILLAN BUILDING, 4 CRINAN ST, LONDON N1 9XW, ENGLAND
Language English
Article-Number 4545
Keywords-Plus NONLINEAR DIELECTRIC MICROSCOPY; SCANNING FORCE MICROSCOPY; THIN-FILMS; NANOSCALE; POLARIZATION; SPINTRONICS; ELECTRONICS; CRYSTAL; SYSTEMS; PHYSICS
Research-Areas Science \& Technology - Other Topics
Web-of-Science-Categories Multidisciplinary Sciences
Author-Email ievlevav@ornl.gov
ResearcherID-Numbers Kalinin, Sergei/I-9096-2012 Ievlev, Anton/H-3678-2012 Shur, Vladimir/J-9078-2015
ORCID-Numbers Kalinin, Sergei/0000-0001-5354-6152 Ievlev, Anton/0000-0003-3645-0508
Funding-Acknowledgement Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy; SFFR-NSF project (U.S. National Science Foundation) {[}NSF-DMR-1210588]; SFFR-NSF project (State Fund of Fundamental State Fund of Fundamental Research of Ukraine) {[}UU48/002]; CNMS {[}2013-293]; National Academy of Sciences of Ukraine {[}35-02-14]; RFBR {[}13-02-01391-a]; Government of Sverdlovsk region {[}13-02-96041-r-Ural]
Funding-Text A part of this research (A.V.I. and S.V.K.) was conducted at the Center for Nanophase Materials Sciences, which is sponsored at Oak Ridge National Laboratory by the Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy. A.N.M. and E. A. E. acknowledge the support via bilateral SFFR-NSF project (U.S. National Science Foundation under NSF-DMR-1210588, State Fund of Fundamental State Fund of Fundamental Research of Ukraine, grant UU48/002), CNMS user project 2013-293 and National Academy of Sciences of Ukraine (grant 35-02-14). V.Y.S. acknowledge CNMS user proposal, RFBR and Government of Sverdlovsk region (grant 13-02-96041-r-Ural) and RFBR (grant 13-02-01391-a). We gratefully acknowledge Yuriy Pershin and Daria Khanukaeva for valuable discussions.
Number-of-Cited-References 46
Usage-Count-Last-180-days 3
Usage-Count-Since-2013 49
Journal-ISO Nat. Commun.
Doc-Delivery-Number AN5JK