Static conductivity of charged domain walls in uniaxial ferroelectric semiconductors / Eliseev E. A.,Morozovska A. N.,Svechnikov G. S.,Gopalan Venkatraman,Shur V. Ya. // PHYSICAL REVIEW B. - 2011. - V. 83, l. 23.

ISSN/EISSN:

1098-0121 / нет данных

Type:

Article

Abstract:

By using Landau-Ginzburg-Devonshire theory, we numerically calculated the static conductivity of charged domain walls with different incline angles with respect to the spontaneous polarization vector in the uniaxial ferroelectric semiconductors of n type. We used the effective mass approximation for the electron and hole density of states, which is valid at an arbitrary distance from the domain wall. Due to the electron accumulation, the static conductivity drastically increases at the inclined head-to-head wall by 1 order of magnitude for small incline angles theta similar to pi/40 and by 3 orders of magnitude for the perpendicular domain wall (theta = pi/2). There are space-charge regions around the charged domain walls, but the quantitative characteristics of the regions (width and distribution of the carriers) appear very differently for the tail-to-tail and head-to-head walls in the considered donor-doped ferroelectric semiconductor. The head-to-head wall is surrounded by the space-charge layer with accumulated electrons and depleted donors with the same thickness (similar to 40-100 correlation lengths). The tail-to-tail wall is surrounded by the thin space-charge layer with accumulated holes with thicknesses of similar to 5-10 correlation lengths, a thick layer with accumulated donors with thicknesses of similar to 100-200 correlation lengths, as well as the layer depleted by electrons with thicknesses of similar to 100-200 correlation lengths. The conductivity across the tail-to-tail wall is at least an order of magnitude smaller than the one for the head-to-head wall due to the low mobility of the holes, which are improper carriers. The results are in qualitative agreement with recent experimental data for LiNbO(3) doped with MgO.

Author keywords:

LITHIUM-NIOBATE; BARIUM TITANATE; SINGLE-CRYSTALS; DATA-STORAGE; DENSITY; LITAO3

DOI:

10.1103/PhysRevB.83.235313

Web of Science ID:

ISI:000291433300006

Соавторы в МНС:

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Другие поля

Поле	Значение
Month	JUN 9
Publisher	AMER PHYSICAL SOC
Address	ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA
Language	English
Article-Number	235313
Keywords-Plus	LITHIUM-NIOBATE; BARIUM TITANATE; SINGLE-CRYSTALS; DATA-STORAGE; DENSITY; LITAO3
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
Author-Email	morozo@i.com.ua vladimir.shur@usu.ru
ResearcherID-Numbers	Shur, Vladimir/J-9078-2015
Funding-Acknowledgement	NAS Ukraine; Ukraine State Agency on Science, Innovation and Informatization {[}UU30/004]; National Science Foundation {[}DMR-0908718, DMR-0820404]
Funding-Text	A.N.M. and E.A.E. gratefully acknowledge multiple discussions with Sergei V. Kalinin (ORNL). E.A.E., A.N.M., and G.S.V. acknowledge the financial support of the NAS Ukraine and Ukraine State Agency on Science, Innovation and Informatization (UU30/004). Research was sponsored, in part, by (V.G., G.S.V., E.A.E., and A.N.M.) the National Science Foundation (Grants No. DMR-0908718 and No. DMR-0820404). E.A.E., A.N.M., and G.S.V. acknowledge user agreement with CNMS N UR-08-869.
Number-of-Cited-References	37
Usage-Count-Last-180-days	2
Usage-Count-Since-2013	63
Journal-ISO	Phys. Rev. B
Doc-Delivery-Number	775BZ