Finite size and intrinsic field effect on the polar-active properties of ferroelectric-semiconductor heterostructures / Morozovska A. N.,Eliseev E. A.,Svechnikov S. V.,Krutov A. D.,Shur V. Y.,Borisevich A. Y.,Maksymovych P.,Kalinin S. V. // PHYSICAL REVIEW B. - 2010. - V. 81, l. 20.

ISSN/EISSN:

1098-0121 / 1550-235X

Type:

Article

Abstract:

Using Landau-Ginzburg-Devonshire approach we calculated the equilibrium distributions of electric field, polarization, and space charge in the ferroelectric-semiconductor heterostructures containing proper or incipient ferroelectric thin films. The role of the polarization gradient and intrinsic surface energy, interface dipoles, and free charges on polarization dynamics are specifically explored. The intrinsic field effects, which originated at the ferroelectric-semiconductor interface, lead to the surface band bending and result into the formation of depletion space-charge layer near the semiconductor surface. During the local polarization reversal (caused by the electric field of the nanosized tip of the scanning probe microscope) the thickness and charge of the interface layer drastically changes, in particular, the sign of the screening carriers is determined by the polarization direction. Obtained analytical solutions could be extended to analyze polarization-mediated electronic transport.

Author keywords:

THIN-FILMS; INTERFACE; POLARIZATION; TRANSITION; INSULATOR; SRTIO3; DIODE

DOI:

10.1103/PhysRevB.81.205308

Web of Science ID:

ISI:000278144500060

Соавторы в МНС:

—

Другие поля

Поле	Значение
Month	MAY 15
Publisher	AMER PHYSICAL SOC
Address	ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA
Language	English
Article-Number	205308
EISSN	1550-235X
Keywords-Plus	THIN-FILMS; INTERFACE; POLARIZATION; TRANSITION; INSULATOR; SRTIO3; DIODE
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
Author-Email	morozo@i.com.ua sergei2@ornl.gov
ResearcherID-Numbers	Kalinin, Sergei/I-9096-2012 Borisevich, Albina/B-1624-2009 Maksymovych, Petro/C-3922-2016 Shur, Vladimir/J-9078-2015
ORCID-Numbers	Kalinin, Sergei/0000-0001-5354-6152 Borisevich, Albina/0000-0002-3953-8460 Maksymovych, Petro/0000-0003-0822-8459
Funding-Acknowledgement	Ministry of Science and Education of Ukraine; National Science Foundation {[}DMR-0908718]; DOE SISGR; Division of Scientific User Facilities, US DOE
Funding-Text	Authors are grateful to E. Tsymbal and E. Tsymbal for valuable critical remarks. Research is sponsored by Ministry of Science and Education of Ukraine and National Science Foundation (Materials World Network, Grant No. DMR-0908718). S.V.K. and A.B. acknowledge the DOE SISGR program. P.M. is supported by the Division of Scientific User Facilities, US DOE.
Number-of-Cited-References	45
Usage-Count-Last-180-days	3
Usage-Count-Since-2013	24
Journal-ISO	Phys. Rev. B
Doc-Delivery-Number	602MX