Rearrangement of ferroelectric domain structure induced by chemical etching / Shur VY,Lobov AI,Shur AG,Kurimura S,Nomura Y,Terabe K,Liu XY,Kitamura K // APPLIED PHYSICS LETTERS. - 2005. - V. 87, l. 2.

ISSN/EISSN:

0003-6951 / нет данных

Type:

Article

Abstract:

The rearrangement of the domain structure induced by chemical etching has been observed in periodically poled MgO-doped stoichiometric lithium tantalate single crystals. Topographic and piezoresponse scanning probe microscopy have been used for measuring the etching relief height and domain wall position after etching. The considerable shift of the domain wall during etching by pure hydrofluoric acid has been revealed by analysis of the experimental data. We have found that the wall motion proceeded after the termination of the etching procedure. We have shown that the whole consequence of the domain wall positions during etching is recorded in the etching relief height and can be extracted with high spatial and temporal resolution. (c) 2005 American Institute of Physics.

Author keywords:

STOICHIOMETRIC LITAO3; LITHIUM-NIOBATE; CRYSTAL-GROWTH; LINBO3

DOI:

10.1063/1.1993769

Web of Science ID:

ISI:000230435800037

Соавторы в МНС:

Другие поля

Поле	Значение
Month	JUL 11
Publisher	AMER INST PHYSICS
Address	CIRCULATION \& FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
Language	English
Article-Number	022905
Keywords-Plus	STOICHIOMETRIC LITAO3; LITHIUM-NIOBATE; CRYSTAL-GROWTH; LINBO3
Research-Areas	Physics
Web-of-Science-Categories	Physics, Applied
Author-Email	vladimir.shur@usu.ru
ResearcherID-Numbers	Liu, Xiaoyan/H-5741-2011 Shur, Vladimir/J-9078-2015
Number-of-Cited-References	18
Usage-Count-Since-2013	12
Journal-ISO	Appl. Phys. Lett.
Doc-Delivery-Number	944NM