Switching kinetics in normal and relaxor ferroelectrics: PZT thin films and PLZT ceramics / Shur V // . - 1996. - V. , l. . - P. 233-240.

ISSN/EISSN:

нет данных / нет данных

Type:

Proceedings Paper

Abstract:

The switching process in normal and relaxer ferroelectrics was described as a result of evolution of domain structure. The original mathematical treatment allows to extract the main kinetic parameters from switching current and elastic light scattering data measured under the action of field pulses. Specific of domain kinetics in ferroelectric thin films and relaxer ceramics was demonstrated. The scenario of evolution of heterophase structure in relaxors during `'switching'' and spontaneous `'backswitching'' is proposed.

Author keywords:

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DOI:

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Web of Science ID:

ISI:A1996BH95D00041

Соавторы в МНС:

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Другие поля

Поле	Значение
Editor	Kulwicki, BM and Amin, A and Safari, A
Booktitle	ISAF `96 - PROCEEDINGS OF THE TENTH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2
Note	10th IEEE International Symposium on Applications of Ferroelectrics (ISAF 96), E BRUNSWICK, NJ, AUG 18-21, 1996
Organization	IEEE, Ultrason Ferroelect \& Frequency Control Soc; USN, Off Naval Res; Def Adv Res Project Agcy; Howatt Fdn
Publisher	I E E E
Address	345 E 47TH ST, NEW YORK, NY 10017
Language	English
ISBN	0-7803-3356-X
Research-Areas	Engineering
Web-of-Science-Categories	Engineering, Electrical \& Electronic
ResearcherID-Numbers	Shur, Vladimir/J-9078-2015
Usage-Count-Since-2013	1
Doc-Delivery-Number	BH95D