Switching kinetics in epitaxial PZT thin films / Shur VY,Makarov SD,Ponomarev NY,Volegov VV,Tonkachyova NA,Suslov LA,Salashchenko NN,Kluenkov EV // MICROELECTRONIC ENGINEERING. - 1995. - V. 29, l. 1-4. - P. 153-157.

ISSN/EISSN:

0167-9317 / нет данных

Type:

Article; Proceedings Paper

Abstract:

We present the investigations of the domain kinetics during fast switching in PZT/YBCO epitaxial heterostructures. The original method of mathematical treatment enables to reconstruct the main stages of domain evolution from transient current data and to determine the field dependence of main kinetic parameters.

Author keywords:

нет данных

DOI:

10.1016/0167-9317(95)00135-2

Web of Science ID:

ISI:A1995TP60800031

Соавторы в МНС:

—

Другие поля

Поле	Значение
Month	DEC
Note	1st European Meeting on Integrated Ferroelectrics (EMIF 1), at the 8th European Meeting on Ferroelectrics (EMF 8), UNIV NIJMEGEN, FAC SCI, NIJMEGEN, NETHERLANDS, JUL 03-05, 1995
Organization	European Commiss; GEC Marconi; Philips Res; Siemens; Thomson CSF; Univ Nijmegen Univ, Fac Sci
Publisher	ELSEVIER SCIENCE BV
Address	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Language	English
Research-Areas	Engineering; Science \& Technology - Other Topics; Optics; Physics
Web-of-Science-Categories	Engineering, Electrical \& Electronic; Nanoscience \& Nanotechnology; Optics; Physics, Applied
ResearcherID-Numbers	Shur, Vladimir/J-9078-2015
ORCID-Numbers	Salashchenko, Nikolai/0000-0003-1909-8637
Number-of-Cited-References	12
Usage-Count-Since-2013	2
Journal-ISO	Microelectron. Eng.
Doc-Delivery-Number	TP608