Simulation of defect zones in scribed silicon wafers / Ogorodnikov Alexey I.,Ogorodnikova Olga M.,Tikhonov Igor N. // . - 2010. - V. 15, l. .

ISSN/EISSN:

1757-8981 / нет данных

Type:

Proceedings Paper

Abstract:

The paper presents the results of computer simulation of silicon wafers under scribe loading conditions. Finite Element (FE) analysis was applied to estimate a value of stresses and spread of defect zone around scratch line. It was revealed that due to impact of diamond tip, a complex stress-strain state is produced in the wafer, which is related to the appearance of defect zones in silicon. The approved methods of cutting simulation could be employed for various types of brittle materials to predict defects and damage of crystal during separation processing.

Author keywords:

нет данных

DOI:

10.1088/1757-899X/15/1/012046

Web of Science ID:

ISI:000315348600046

Соавторы в МНС:

Другие поля

Поле	Значение
Booktitle	11TH EUROPHYSICAL CONFERENCE ON DEFECTS IN INSULATING MATERIALS (EURODIM 2010)
Series	IOP Conference Series-Materials Science and Engineering
Note	11th Europhysical Conference on Defects in Insulating Materials (EURODIM), Res Inst Solid State Phys \& Optics, Pecs, HUNGARY, JUL 12-16, 2010
Organization	Univ Pecs, Inst Phys
Publisher	IOP PUBLISHING LTD
Address	DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND
Language	English
Article-Number	012046
Research-Areas	Materials Science
Web-of-Science-Categories	Materials Science, Multidisciplinary
Author-Email	o.m.ogorodnikova@bk.ru
ResearcherID-Numbers	Ogorodnikova, Olga/B-5336-2011 Ogorodnikov, Alexey/D-6179-2015
Number-of-Cited-References	9
Usage-Count-Last-180-days	2
Usage-Count-Since-2013	24
Doc-Delivery-Number	BDW55