Photoelectron spectroscopy of E ` centers in crystalline and glassy silicon dioxide / Zatsepin AF,Biryukov DY,Kortov VS // PHYSICS OF THE SOLID STATE. - 2006. - V. 48, l. 2. - P. 245-254.

ISSN/EISSN:

1063-7834 / нет данных

Type:

Article

Abstract:

Radiation-induced E' centers in SiO2 were studied to test the possibility of applying optically stimulated electron emission (OSEE) to the spectroscopy of excited states of point defects in dielectrics. The spectral responses of the OSEE of crystalline alpha quartz and silica glass irradiated by 10-MeV electrons were measured and studied. It was established that volume E' centers in the crystalline and glassy SiO2 modifications are dominant emission-active defects. Surface E'(s) (1) centers were also detected in glassy SiO2. A model of the energy structure of E' centers accounting for the absence of luminescence and taking into account the presence of two nonradiative (intracenter and ionization) relaxation channels is proposed. This model was used to explain the mechanism of photothermal decay of the E' centers and to determine the ionization activation barriers and quantum yields of these centers. The emission, spectral, and kinetic parameters of the volume and surface E' centers in glassy SiO2 were obtained, showing the excited states of these defects to have identical atomic configurations.

Author keywords:

OXYGEN VACANCY; POINT-DEFECTS; SIO2; QUARTZ; MODEL

DOI:

10.1134/S1063783406020090

Web of Science ID:

ISI:000236002200009

Соавторы в МНС:

Другие поля

Поле	Значение
Month	JAN
Publisher	SPRINGER
Address	233 SPRING STREET, NEW YORK, NY 10013 USA
Language	English
Keywords-Plus	OXYGEN VACANCY; POINT-DEFECTS; SIO2; QUARTZ; MODEL
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
Author-Email	zats@dpt.ustu.ru
ResearcherID-Numbers	Zatsepin, Anatoly/L-7335-2016
ORCID-Numbers	Zatsepin, Anatoly/0000-0001-9539-2403
Number-of-Cited-References	25
Journal-ISO	Phys. Solid State
Doc-Delivery-Number	021RI