Nonradiative relaxation of photoexcited O-1(0) centers in glassy SiO2 / Zatsepin AF,Biryukov DY,Kortov VS,Cholakh SO // PHYSICS OF THE SOLID STATE. - 2002. - V. 44, l. 9. - P. 1671-1675.

ISSN/EISSN:

1063-7834 / нет данных

Type:

Article

Abstract:

The processes involved in the excited-state relaxation of hole O-1(0) centers at nonbridging oxygen atoms in glassy SiO2 were studied using luminescence, optical absorption, and photoelectron emission spectroscopy. An additional nonradiative relaxation channel, in addition to the intracenter quenching of the 1.9-eV luminescence band, was established to become operative at temperatures above 370 K. This effect manifests itself in experiments as a negative deviation of the temperature-dependent luminescence intensity from the well-known Mott law and is identified as thermally activated external quenching with an energy barrier of 0.46 eV. Nonradiative transitions initiate, within the external quenching temperature interval, the migration of excitation energy, followed by the creation of free electrons. In the final stages, this relaxation process becomes manifest in the form of spectral sensitization of electron photoemission, which is excited in the hole O-1(0)-center absorption band. (C) 2002 MAIK ``Nauka/Interperiodica{''}.

Author keywords:

BAND

DOI:

10.1134/1.1507246

Web of Science ID:

ISI:000177865400009

Соавторы в МНС:

Другие поля

Поле	Значение
Publisher	AMER INST PHYSICS
Address	CIRCULATION \& FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
Language	English
Keywords-Plus	BAND
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
ResearcherID-Numbers	Zatsepin, Anatoly/L-7335-2016 Cholakh, Seif/M-8221-2016
ORCID-Numbers	Zatsepin, Anatoly/0000-0001-9539-2403 Cholakh, Seif/0000-0002-9313-6614
Number-of-Cited-References	12
Journal-ISO	Phys. Solid State
Doc-Delivery-Number	591DX