Electronic Structure of the Si-C-N Amorphous Films / Zatsepin D. A.,Kurmaev E. Z.,Moewes A.,Cholakh S. O. // PHYSICS OF THE SOLID STATE. - 2011. - V. 53, l. 9. - P. 1806-1810.

ISSN/EISSN:

1063-7834 / нет данных

Type:

Article

Abstract:

The results of the investigation of amorphous a-SiC (x) N (y) films of various compositions by the ultra-soft X-ray emission spectroscopy are presented. The Si L (2, 3), C K (alpha), and N K (alpha) emission spectra, which reflect the partial densities of states Si 3s3d, C 2p, and N 2p, respectively, have been measured and analyzed. It has been established that the Si-N chemical bond is similar in type to the Si-C chemical bond and completely substitutes for the Si-C bonds in thin a-SiC (x) N (y) films as the oxygen concentration increases. A similar effect is associated with the local agglomeration and subsequent clusterization of carbon atoms in the SiN-enriched regions of the internal volume of the film. A high ability of the a-SiC (x) N (y) films to oxidation in air has been established. This has been confirmed by a satisfactory approximation of the Si L (2, 3) X-ray emission spectra of a-SiCN with the use of the superposition of the spectra of gamma-Si(3)N(4) and Si(2)N(2)O. The relative weight coefficients of the spectra of gamma-Si(3)N(4), which have been used to approximate the spectra of thin a-SiC (x) N (y) films, are proportional to the values of the Young's modulus for different values of compositions (different values of x and y).

Author keywords:

X-RAY-ABSORPTION; CARBON NITRIDE FILMS; THIN-FILM; EMISSION BANDS; ALLOY-FILMS; SPECTROSCOPY; CRYSTALLINE; COATINGS; PHASE

DOI:

10.1134/S1063783411090356

Web of Science ID:

ISI:000294810800008

Соавторы в МНС:

Другие поля

Поле	Значение
Month	SEP
Publisher	MAIK NAUKA/INTERPERIODICA/SPRINGER
Address	233 SPRING ST, NEW YORK, NY 10013-1578 USA
Language	English
Keywords-Plus	X-RAY-ABSORPTION; CARBON NITRIDE FILMS; THIN-FILM; EMISSION BANDS; ALLOY-FILMS; SPECTROSCOPY; CRYSTALLINE; COATINGS; PHASE
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
Author-Email	nexcom@list.ru
ResearcherID-Numbers	Zatsepin, Dmitry/F-5520-2012 Kurmaev, Ernst/J-4254-2013 Cholakh, Seif/M-8221-2016
ORCID-Numbers	Kurmaev, Ernst/0000-0003-4625-4930 Cholakh, Seif/0000-0002-9313-6614
Funding-Acknowledgement	Russian Foundation for Basic Research {[}11-02-00939, 09-02-00493, 09-02-00793]
Funding-Text	This study was supported by the Russian Foundation for Basic Research (project nos. 11-02-00939, 09-02-00493, and 09-02-00793).
Number-of-Cited-References	19
Usage-Count-Since-2013	14
Journal-ISO	Phys. Solid State
Doc-Delivery-Number	819FM