Effect of high doses on the Si L-2,L-3 X-ray emission spectra of silicon implanted with iron ions under steady-state conditions / Zatsepin D. A.,Kurmaev E. Z.,Shein I. R.,Cherkashenko V. M.,Shamin S. N.,Cholakh S. O. // PHYSICS OF THE SOLID STATE. - 2007. - V. 49, l. 1. - P. 75-81.

ISSN/EISSN:

1063-7834 / нет данных

Type:

Article

Abstract:

The effect of high doses on p- and n-type silicon samples implanted with Fe+ ions under steady-state conditions (implantation energy, 100 keV; ion current density, 0.6-0.8 mu A/cm(2); irradiation dose, 10(14)-10(16) ions/cm(2)) is investigated using Si L-2.3 x-ray emission spectroscopy (the 3d3s -> 2p electronic transition). An analysis of the Si L x-ray emission spectra of the silicon samples is performed by comparison with the spectra of reference materials and the spectra of silicon samples implanted with Fe+ ions in a pulsed mode. The Si L x-ray emission spectra are simulated by the molecular dynamics and Full-potential linearized augmented-plane-wave (FLAPW) methods. It is revealed that the effect of high doses under steady-state conditions of Fe+ ion implantation into the semiconductor crystal matrix exhibits specific features: the disordering of the structure and partial amorphization of the sample from the surface deep into the bulk are more pronounced than those observed under conditions of pulsed ion implantation, although virtually no recrystallization of the sample at the threshold dose occurs. The most probable origins and mechanisms of the effect of high doses on the samples under investigation are discussed.

Author keywords:

ELECTRONIC-STRUCTURE; MOLECULAR-DYNAMICS; SPECTROSCOPY

DOI:

10.1134/S1063783407010131

Web of Science ID:

ISI:000243688400013

Соавторы в МНС:

Другие поля

Поле	Значение
Month	JAN
Publisher	MAIK NAUKA/INTERPERIODICA/SPRINGER
Address	233 SPRING ST, NEW YORK, NY 10013-1578 USA
Language	English
Keywords-Plus	ELECTRONIC-STRUCTURE; MOLECULAR-DYNAMICS; SPECTROSCOPY
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
Author-Email	d\_zatsepin@ifmlrs.uran.ru
ResearcherID-Numbers	Kurmaev, Ernst/J-4254-2013 Shamin, Sergey/K-2922-2013 Shein, Igor/H-3436-2016 Zatsepin, Dmitry/F-5520-2012 Cholakh, Seif/M-8221-2016
ORCID-Numbers	Kurmaev, Ernst/0000-0003-4625-4930 Shamin, Sergey/0000-0001-8213-5926 Shein, Igor/0000-0003-0153-0225 Cholakh, Seif/0000-0002-9313-6614
Number-of-Cited-References	24
Usage-Count-Since-2013	1
Journal-ISO	Phys. Solid State
Doc-Delivery-Number	128VS