The effect of high iron-ion implantation doses on the X-ray emission spectra of silicon / Zatsepin DA,Yanenkova ES,Kurmaev EZ,Cherkashenko VM,Shamin SN,Cholakh SO // PHYSICS OF THE SOLID STATE. - 2006. - V. 48, l. 2. - P. 218-223.

ISSN/EISSN:

1063-7834 / нет данных

Type:

Article

Abstract:

X-ray emission spectroscopy (Si L (2, 3) spectra, 3d3s -> 2p electronic transition) was employed to study p-and n-type silicon samples implanted with Fe+ ions in a pulse mode (the implantation energy was 30 keV, the pulse current was varied up to 0.5 A, the pulse duration was 400 mu s, and the ion irradiation doses ranged from 10(14) to 10(17) cm(-2)). The x-ray emission spectra were found to be dependent on the ion irradiation dose and the electron-accelerating voltage that was used in the x-ray studies. By comparing the Si L spectra with the spectra of reference materials and by modeling the former spectra, it was revealed that, as the ion-irradiation dose increases, there occur disordering of the structure, partial amorphization of the sample in a surface layer approximately 7200-angstrom thick, and its subsequent recrystallization (under high irradiation doses). It was shown that this effect is most pronounced in a layer at a depth of similar to 1000 angstrom. and is not associated with the formation of iron silicide FeSi in the bulk of the sample but rather is due to the breakage of Si-Si bonds caused by ion implantation under the irradiation doses used.

Author keywords:

ELECTRONIC-STRUCTURE; SPECTROSCOPY; BOMBARDMENT; CUO

DOI:

10.1134/S1063783406020041

Web of Science ID:

ISI:000236002200004

Соавторы в МНС:

Другие поля

Поле	Значение
Month	JAN
Publisher	SPRINGER
Address	233 SPRING STREET, NEW YORK, NY 10013 USA
Language	English
Keywords-Plus	ELECTRONIC-STRUCTURE; SPECTROSCOPY; BOMBARDMENT; CUO
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
Author-Email	d\_zatsepin@ifmlrs.uran.ru
ResearcherID-Numbers	Kurmaev, Ernst/J-4254-2013 Cholakh, Seif/M-8221-2016 Shamin, Sergey/K-2922-2013 Zatsepin, Dmitry/F-5520-2012
ORCID-Numbers	Kurmaev, Ernst/0000-0003-4625-4930 Cholakh, Seif/0000-0002-9313-6614 Shamin, Sergey/0000-0001-8213-5926
Number-of-Cited-References	14
Usage-Count-Since-2013	1
Journal-ISO	Phys. Solid State
Doc-Delivery-Number	021RI