Simulation of transport and relaxation of hot electrons in the near-surface layers of nanostructured and crystalline silicon dioxides / Kortov V. S.,Zvonarev S. V. // JOURNAL OF SURFACE INVESTIGATION-X-RAY SYNCHROTRON AND NEUTRON TECHNIQUES. - 2011. - V. 5, l. 4. - P. 764-768.

ISSN/EISSN:

1027-4510 / нет данных

Type:

Article

Abstract:

Computer simulation has been performed to investigate the transport and energy relaxation of photoelectrons in the near-surface layers of nanostructured and crystalline silicon dioxides in the presence and absence of an electric field. Calculations have shown that nanostructured samples have a shorter hot-electron thermalization time and exhibit weaker influence of an electric field on the electron energy relaxation process than the bulk crystal. The size effect calculated in terms of electron thermalization time is most pronounced at particle sizes less than 5 nm.

Author keywords:

нет данных

DOI:

10.1134/S1027451011010137

Web of Science ID:

ISI:000293651200025

Соавторы в МНС:

Другие поля

Поле	Значение
Month	AUG
Publisher	MAIK NAUKA/INTERPERIODICA/SPRINGER
Address	233 SPRING ST, NEW YORK, NY 10013-1578 USA
Language	English
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
Funding-Acknowledgement	Russian Foundation for Basic Research {[}08-02-99080I]
Funding-Text	This study was supported by the Russian Foundation for Basic Research, project no. 08-02-99080I.
Number-of-Cited-References	15
Usage-Count-Since-2013	3
Journal-ISO	J. Surf. Ingestig.-X-Ray Synchro.
Doc-Delivery-Number	804JX