COMPUTER SIMULATION OF CHARGING THE SILICON DIOXIDE SURFACE AND SUBSURFACE LAYERS BY ELECTRON BOMBARDMENT / Kortov V. S.,Zvonarev S. V.,Spiridonova T. V. // RUSSIAN PHYSICS JOURNAL. - 2011. - V. 54, l. 3. - P. 288-295.

ISSN/EISSN:

1064-8887 / нет данных

Type:

Article

Abstract:

A physical model and program of calculating the parameters of charging dielectrics by electron bombardment is described. A method of computer simulation is used to investigate the main processes of charging the subsurface silicon dioxide layers. Dependences of the current density, volume charge density, and electric field strength on the material layer depth are calculated for variable electron beam parameters, irradiation time, and grid potential near the sample surface.

Author keywords:

computer simulation; surface charging; electron bombardment SEMICONDUCTORS

DOI:

нет данных

Web of Science ID:

ISI:000294500800005

Соавторы в МНС:

Другие поля

Поле	Значение
Month	AUG
Publisher	SPRINGER
Address	233 SPRING ST, NEW YORK, NY 10013 USA
Language	English
Keywords-Plus	SEMICONDUCTORS
Research-Areas	Physics
Web-of-Science-Categories	Physics, Multidisciplinary
Author-Email	v.kortov@mail.ustu.ru szvonarev@dpt.ustu.ru
Funding-Acknowledgement	Russian Foundation for Basic Research {[}08-02-99080I]
Funding-Text	This work was supported in part by the Russian Foundation for Basic Research (grant No. 08-02-99080I).
Number-of-Cited-References	9
Usage-Count-Last-180-days	2
Usage-Count-Since-2013	15
Journal-ISO	Russ. Phys. J.
Doc-Delivery-Number	815BJ