Self-consistent electrical charging of insulating layers and metal-insulator-semiconductor structures / Glavatskikh IA,Kortov VS,Fitting HJ // JOURNAL OF APPLIED PHYSICS. - 2001. - V. 89, l. 1. - P. 440-448.

ISSN/EISSN:

0021-8979 / нет данных

Type:

Article

Abstract:

By means of a computer simulation the self-consistent charge transport with the current densities j(x,t), the respective charges rho (x,t), field strengths F(x,t), and potential distributions V(x,t) in SiO2 layers are obtained as a function of the insulator depth x and the injection time t. The SiO2 layers are considered as open layers on silicon substrate or they are embedded in metal-oxide-semiconductor (MOS) structures. The given currents of primary electrons, the field-dependent ballistic currents of secondary electrons and holes as well as the Fowler-Nordheim injection of electrons from the substrate into the dielectric layer are taken into account. This method allows a defined charge storage and the explanation of complicated emission, charging-up, and breakdown processes within insulating layers during electron bombardment and/or high-field charge injection from adjacent electrodes, e.g., in MOS structures. (C) 2001 American Institute of Physics.

Author keywords:

HOLE TRANSPORT; MONTE-CARLO; SIMULATION; EMISSION; BEAM

DOI:

10.1063/1.1330242

Web of Science ID:

ISI:000166118900066

Соавторы в МНС:

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Другие поля

Поле	Значение
Month	JAN 1
Publisher	AMER INST PHYSICS
Address	2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA
Language	English
Keywords-Plus	HOLE TRANSPORT; MONTE-CARLO; SIMULATION; EMISSION; BEAM
Research-Areas	Physics
Web-of-Science-Categories	Physics, Applied
Number-of-Cited-References	27
Usage-Count-Last-180-days	2
Usage-Count-Since-2013	8
Journal-ISO	J. Appl. Phys.
Doc-Delivery-Number	387JF