Energy spectrum and transport in narrow HgTe quantum wells / Germanenko A. V.,Minkov G. M.,Rut O. E.,Sherstobitov A. A.,Dvoretsky S. A.,Mikhailov N. N. // SEMICONDUCTORS. - 2015. - V. 49, l. 1. - P. 39-43.

ISSN/EISSN:

1063-7826 / 1090-6479

Type:

Article

Abstract:

The results of an experimental study of the transport phenomena and the hole energy spectrum of two-dimensional systems in the quantum well of HgTe zero-gap semiconductor with normal arrangement of quantum-confinement subbands are presented. An analysis of the experimental data allows us to reconstruct the carrier energy spectrum near the hole subband extrema. The results are interpreted using the standard kP model.

Author keywords:

нет данных

DOI:

10.1134/S1063782615010108

Web of Science ID:

ISI:000347698500009

Соавторы в МНС:

Другие поля

Поле	Значение
Month	JAN
Publisher	MAIK NAUKA/INTERPERIODICA/SPRINGER
Address	233 SPRING ST, NEW YORK, NY 10013-1578 USA
Language	English
EISSN	1090-6479
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
Author-Email	Alexander.Germanenko@urfu.ru
ResearcherID-Numbers	Sherstobitov, Andrey/K-3838-2013 Minkov, Grigory/K-3855-2013
ORCID-Numbers	Sherstobitov, Andrey/0000-0001-9267-4181 Minkov, Grigory/0000-0001-8090-5309
Funding-Acknowledgement	Russian Foundation for Basic Research {[}12-02-00098, 13-02-00322]; Ministry of Education and Science of the Russian Federation
Funding-Text	This study was supported by the Russian Foundation for Basic Research (projects nos. 12-02-00098 and 13-02-00322) and the Ministry of Education and Science of the Russian Federation.
Number-of-Cited-References	13
Usage-Count-Since-2013	9
Journal-ISO	Semiconductors
Doc-Delivery-Number	AY6TM