Two-Dimensional Semimetal in Wide HgTe Quantum Wells: Charge-Carrier Energy Spectrum and Magnetotransport / Germanenko A. V.,Minkov G. M.,Rut O. E.,Sherstobitov A. A.,Dvoretsky S. A.,Mikhailov N. N. // SEMICONDUCTORS. - 2013. - V. 47, l. 12. - P. 1562-1566.

ISSN/EISSN:

1063-7826 / 1090-6479

Type:

Article

Abstract:

The magnetoresistivity and the Hall and Shubnikov-de Haas effects in heterostructures with a single 20.2-nm-wide quantum well made from the gapless semiconductor HgTe are studied experimentally. The measurements are performed on gated samples over a wide range of electron and hole densities. The data obtained are used to reconstruct the energy spectrum of electrons and holes in the vicinity of the extrema of the quantum-confinement subbands. It is shown that the charge-carrier dispersion relation in the investigated systems differs from that calculated within the framework of the conventional kp model.

Author keywords:

SEMICONDUCTOR; STATES

DOI:

10.1134/S1063782613120063

Web of Science ID:

ISI:000328260100004

Соавторы в МНС:

Другие поля

Поле	Значение
Month	DEC
Publisher	MAIK NAUKA/INTERPERIODICA/SPRINGER
Address	233 SPRING ST, NEW YORK, NY 10013-1578 USA
Language	English
EISSN	1090-6479
Keywords-Plus	SEMICONDUCTOR; STATES
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
Author-Email	Alexander.Germanenko@usu.ru
ResearcherID-Numbers	Sherstobitov, Andrey/K-3838-2013 Minkov, Grigory/K-3855-2013
ORCID-Numbers	Sherstobitov, Andrey/0000-0001-9267-4181 Minkov, Grigory/0000-0001-8090-5309
Funding-Acknowledgement	Russian Foundation for Basic Research {[}12-02-00098, 13-02-00322]
Funding-Text	This study was supported in part by the Russian Foundation for Basic Research (project nos. 12-02-00098, 13-02-00322).
Number-of-Cited-References	20
Usage-Count-Since-2013	8
Journal-ISO	Semiconductors
Doc-Delivery-Number	269RR