Interaction correction to conductivity of AlxGa1-xAs/GaAs double quantum well heterostructures near the balance / Minkov G. M.,Germanenko A. V.,Rut O. E.,Sherstobitov A. A.,Bakarov A. K.,Dmitriev D. V. // PHYSICAL REVIEW B. - 2011. - V. 84, l. 7.

ISSN/EISSN:

1098-0121 / нет данных

Type:

Article

Abstract:

The electron-electron interaction quantum correction to the conductivity of the gated double well AlxGa1-xAs/GaAs structures is investigated experimentally. The analysis of the temperature and magnetic field dependences of the conductivity tensor allows us to obtain reliably the diffusion part of the interaction correction for the regimes when the structure is balanced (i.e., for equal electron concentrations in the wells) and when only one quantum well is occupied. The surprising result is that the interaction correction does not reveal resonant behavior: it is practically the same for both regimes.

Author keywords:

WEAK-LOCALIZATION; SCATTERING

DOI:

10.1103/PhysRevB.84.075337

Web of Science ID:

ISI:000293973800007

Соавторы в МНС:

Другие поля

Поле	Значение
Month	AUG 17
Publisher	AMER PHYSICAL SOC
Address	ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA
Language	English
Article-Number	075337
Keywords-Plus	WEAK-LOCALIZATION; SCATTERING
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
ResearcherID-Numbers	Minkov, Grigory/K-3855-2013 Sherstobitov, Andrey/K-3838-2013
ORCID-Numbers	Minkov, Grigory/0000-0001-8090-5309 Sherstobitov, Andrey/0000-0001-9267-4181
Funding-Acknowledgement	RFBR {[}09-02-12206, 09-02-00789, 10-02-91336, 10-02-00481]
Funding-Text	We would like to thank I. S. Burmistrov and I. V. Gornyi for illuminating discussions. This work has been supported in part by the RFBR (Grant Nos. 09-02-12206, 09-02-00789, 10-02-91336, and 10-02-00481).
Number-of-Cited-References	24
Usage-Count-Since-2013	9
Journal-ISO	Phys. Rev. B
Doc-Delivery-Number	808JK