Energy relaxation rate of the two-dimensional hole gas in a GaAs/InGaAs/GaAs quantum well / Soldatov I. V.,Germanenko A. V.,Minkov G. M.,Rut O. E.,Sherstobitov A. A. // PHYSICAL REVIEW B. - 2011. - V. 83, l. 8.

ISSN/EISSN:

1098-0121 / нет данных

Type:

Article

Abstract:

The nonohmic conductivity of two-dimensional hole gas (2DHG) in single GaAsIn(0.2)Ga(0.8)AsGaAs quantum-well structures within the temperature range of 1.4-4.2 K, the carrier's densities p = (1.5 -8) x 10(15) m(-2) and a wide range of conductivities (10(-4)-100) G(0) (G(0) = e(2)/pi h) was investigated. It was shown that at conductivity sigma > G(0) the energy relaxation rate P(T(h), T(L)) is well described by the conventional theory {[}P. J. Price, J. Appl. Phys. 53, 6863 (1982)], which takes into account scattering on acoustic phonons with both piezoelectric and deformational potential coupling to holes. At the conductivity range 0.01G(0) < sigma < G(0) energy the relaxation rate significantly deviates down from the theoretical value. The analysis of dP/d sigma at different lattice temperature T(L) shows that this deviation does not result from crossover to the hopping conductivity, which occurs at sigma < 10(-2), but from the Pippard ineffectiveness.

Author keywords:

2D ELECTRON-GAS; NONOHMIC CONDUCTIVITY; HETEROSTRUCTURES; SEMICONDUCTORS; TRANSITION

DOI:

10.1103/PhysRevB.83.085307

Web of Science ID:

ISI:000287797000011

Соавторы в МНС:

Другие поля

Поле	Значение
Month	FEB 28
Publisher	AMER PHYSICAL SOC
Address	ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA
Language	English
Article-Number	085307
Keywords-Plus	2D ELECTRON-GAS; NONOHMIC CONDUCTIVITY; HETEROSTRUCTURES; SEMICONDUCTORS; TRANSITION
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
ResearcherID-Numbers	Minkov, Grigory/K-3855-2013 Sherstobitov, Andrey/K-3838-2013
ORCID-Numbers	Minkov, Grigory/0000-0001-8090-5309 Sherstobitov, Andrey/0000-0001-9267-4181
Funding-Acknowledgement	RFBR {[}08-02-00662, 08-02-91962, 09-02-789, 09-02-12206, 10-02-00481, 10-02-91336]
Funding-Text	This work has been supported in part by the RFBR (Grants No. 08-02-00662, 08-02-91962, 09-02-789, 09-02-12206, 10-02-00481, 10-02-91336). We would like to thank E. Romanova for useful discussions.
Number-of-Cited-References	16
Usage-Count-Last-180-days	3
Usage-Count-Since-2013	20
Journal-ISO	Phys. Rev. B
Doc-Delivery-Number	727KH