Low-field anomaly of the hall effect in disordered two-dimensional systems / Germanenko A. V.,Minkov G. M.,Rut O. E.,Soldatov I. V.,Sherstobitov A. A. // SEMICONDUCTORS. - 2010. - V. 44, l. 11. - P. 1430-1434.

ISSN/EISSN:

1063-7826 / нет данных

Type:

Article; Proceedings Paper

Abstract:

This study is devoted to investigation of the nonlinear behavior of the Hall resistance in low magnetic fields. When investigating two-dimensional electron gas in single GaAs/In (x) Ga(1 - x) As/GaAs quantum wells, it is shown that the anomaly of the Hall effect in disordered systems can be described taking into account the second-order quantum corrections to conductivity.

Author keywords:

LOCALIZATION

DOI:

10.1134/S1063782610110102

Web of Science ID:

ISI:000284428900010

Соавторы в МНС:

Другие поля

Поле	Значение
Month	NOV
Note	14th International Workshop on Nanophysics and Nanoelectronics, Nizhni Novgorod, RUSSIA, MAR 15-19, 2010
Organization	Inst Physics Microstructures Russian Acad Sci \& Labochevsky Nizhni Novgorod State Univ (Natl Res Univ)
Publisher	MAIK NAUKA/INTERPERIODICA/SPRINGER
Address	233 SPRING ST, NEW YORK, NY 10013-1578 USA
Language	English
Keywords-Plus	LOCALIZATION
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
Author-Email	Alexander.Germanenko@usu.ru
ResearcherID-Numbers	Minkov, Grigory/K-3855-2013 Sherstobitov, Andrey/K-3838-2013
ORCID-Numbers	Minkov, Grigory/0000-0001-8090-5309 Sherstobitov, Andrey/0000-0001-9267-4181
Number-of-Cited-References	12
Usage-Count-Last-180-days	3
Usage-Count-Since-2013	18
Journal-ISO	Semiconductors
Doc-Delivery-Number	682UQ