Renormalization of hole-hole interaction at decreasing Drude conductivity: Gated GaAs/In(x)Ga(1-x)As/GaAs heterostructures / Minkov G. M.,Germanenko A. V.,Rut O. E.,Sherstobitov A. A.,Zvonkov B. N. // PHYSICAL REVIEW B. - 2007. - V. 76, l. 16.

ISSN/EISSN:

1098-0121 / нет данных

Type:

Article

Abstract:

The diffusion contribution of the hole-hole interaction to the conductivity is analyzed in gated GaAs/In(x)Ga(1-x)As/GaAs heterostructures. We show that the change of the interaction correction to the conductivity with the decreasing Drude conductivity results both from the compensation of the singlet and triplet channels and from the arising prefactor alpha(i)< 1 in the conventional expression for the interaction correction.

Author keywords:

METAL-INSULATOR-TRANSITION; SILICON INVERSION-LAYERS; 2-DIMENSIONAL ELECTRON-SYSTEMS; TEMPERATURE-DEPENDENCE; DISORDERED-SYSTEMS; WEAK LOCALIZATION; MOBILITY; GAS

DOI:

10.1103/PhysRevB.76.165314

Web of Science ID:

ISI:000250620600077

Соавторы в МНС:

Другие поля

Поле	Значение
Month	OCT
Publisher	AMER PHYSICAL SOC
Address	ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA
Language	English
Article-Number	165314
Keywords-Plus	METAL-INSULATOR-TRANSITION; SILICON INVERSION-LAYERS; 2-DIMENSIONAL ELECTRON-SYSTEMS; TEMPERATURE-DEPENDENCE; DISORDERED-SYSTEMS; WEAK LOCALIZATION; MOBILITY; GAS
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
ResearcherID-Numbers	Minkov, Grigory/K-3855-2013 Sherstobitov, Andrey/K-3838-2013
ORCID-Numbers	Minkov, Grigory/0000-0001-8090-5309 Sherstobitov, Andrey/0000-0001-9267-4181
Number-of-Cited-References	38
Usage-Count-Last-180-days	4
Usage-Count-Since-2013	5
Journal-ISO	Phys. Rev. B
Doc-Delivery-Number	226XA