Transverse negative magnetoresistance of two-dimensional structures in the presence of a strong in-plane magnetic field: Weak localization as a probe of interface roughness / Minkov GM,Rut OE,Germanenko AV,Sherstobitov AA,Zvonkov BN,Shashkin VI,Khrykin OI,Filatov DO // PHYSICAL REVIEW B. - 2004. - V. 70, l. 3.

ISSN/EISSN:

1098-0121 / нет данных

Type:

Article

Abstract:

The interference induced transverse negative magnetoresistance of GaAs/InxGa1-xAs/GaAs quantum well heterostructures has been studied in the presence of strong in-plane magnetic field. It is shown that the effect of in-plane magnetic field is determined by the interface roughness and strongly depends on the relationship between mean free path, phase breaking length, and roughness correlation length. Analysis of the experimental results allows us to estimate parameters of short- and long-range correlated roughness which have been found in a good agreement with atomic force microscopy data obtained for just the same samples.

Author keywords:

SEMICONDUCTOR QUANTUM-WELL; ATOMIC-FORCE MICROSCOPY; PARALLEL; HETEROSTRUCTURES; DOTS

DOI:

10.1103/PhysRevB.70.035304

Web of Science ID:

ISI:000222996700067

Соавторы в МНС:

Другие поля

Поле	Значение
Month	JUL
Publisher	AMERICAN PHYSICAL SOC
Address	ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA
Language	English
Article-Number	035304
Keywords-Plus	SEMICONDUCTOR QUANTUM-WELL; ATOMIC-FORCE MICROSCOPY; PARALLEL; HETEROSTRUCTURES; DOTS
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
Author-Email	grigori.minkov@usu.ru
ResearcherID-Numbers	Minkov, Grigory/K-3855-2013 Sherstobitov, Andrey/K-3838-2013
ORCID-Numbers	Minkov, Grigory/0000-0001-8090-5309 Sherstobitov, Andrey/0000-0001-9267-4181
Number-of-Cited-References	16
Usage-Count-Last-180-days	1
Usage-Count-Since-2013	3
Journal-ISO	Phys. Rev. B
Doc-Delivery-Number	842II