Nonohmic conductivity under transition from weak to strong localization in GaAs/InGaAs structures with a two-dimensional electron gas / Sherstobitov AA,Minkov GM,Rut OE,Germanenko AV,Zvonkov BN,Uskova EA,Biryukov AA // SEMICONDUCTORS. - 2003. - V. 37, l. 6. - P. 705-709.

ISSN/EISSN:

1063-7826 / нет данных

Type:

Article

Abstract:

Dependences of electrical conductivity sigma on temperature and electric-field strength were studied in a wide range of conductivities (from sigma < e(2)/h to sigma > e(2)/h) in GaAs/InGaAs/GaAs structures with a two-dimensional electron gas. It is shown that one cannot reliably determine the mechanism of conductivity from the temperature dependence of ohmic conductivity. Studies of nonohmic conductivity make it possible to determine the range of values of low-temperature conductivity that correspond to the transition from the diffusion mechanism of conductivity to the hopping mechanism. It is shown that, in the structures under investigation, the conductivity is still controlled by diffusion as the degree of disorder increases even when the low-temperature conductivity is much lower than e(2)/h. (C) 2003 MAIK ``Nauka / Interperiodica{''}.

Author keywords:

FIELD-INDUCED DELOCALIZATION; METAL-INSULATOR-TRANSITION; ANDERSON LOCALIZATION; 2 DIMENSIONS; REGIME

DOI:

10.1134/1.1582539

Web of Science ID:

ISI:000183349100017

Соавторы в МНС:

Другие поля

Поле	Значение
Publisher	AMER INST PHYSICS
Address	CIRCULATION \& FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
Language	English
Keywords-Plus	FIELD-INDUCED DELOCALIZATION; METAL-INSULATOR-TRANSITION; ANDERSON LOCALIZATION; 2 DIMENSIONS; REGIME
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
ResearcherID-Numbers	Sherstobitov, Andrey/K-3838-2013 Minkov, Grigory/K-3855-2013
ORCID-Numbers	Sherstobitov, Andrey/0000-0001-9267-4181 Minkov, Grigory/0000-0001-8090-5309
Number-of-Cited-References	16
Usage-Count-Since-2013	2
Journal-ISO	Semiconductors
Doc-Delivery-Number	686YT