Role of doped layers in the dephasing of two-dimensional electrons in quantum-well structures / Minkov GM,Germanenko AV,Rut OE,Sherstobitov AA,Zvonkov BN,Uskova EA,Birukov AA // PHYSICAL REVIEW B. - 2001. - V. 64, l. 19.

ISSN/EISSN:

1098-0121 / 1550-235X

Type:

Article

Abstract:

The temperature and gate voltage dependences of the phase breaking time are studied experimentally in GaAs/InGaAs heterostructures with a single quantum well. It is shown that appearance of states at the Fermi energy in the doped layers leads to a significant decrease of the phase breaking time of the carriers in the quantum well and to saturation of the phase breaking time at low temperature.

Author keywords:

нет данных

DOI:

10.1103/PhysRevB.64.193309

Web of Science ID:

ISI:000172307900014

Соавторы в МНС:

Другие поля

Поле	Значение
Month	NOV 15
Publisher	AMER PHYSICAL SOC
Address	ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA
Language	English
Article-Number	193309
EISSN	1550-235X
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
Author-Email	Grigori.Minkov@usu.ru
ResearcherID-Numbers	Sherstobitov, Andrey/K-3838-2013 Minkov, Grigory/K-3855-2013
ORCID-Numbers	Sherstobitov, Andrey/0000-0001-9267-4181 Minkov, Grigory/0000-0001-8090-5309
Number-of-Cited-References	5
Usage-Count-Since-2013	2
Journal-ISO	Phys. Rev. B
Doc-Delivery-Number	494WB