Inter-well transitions and negative magnetoresistance in double-quantum-well heterostructures / Minkov GM,Germanenko AV,Rut OE,Khrykin OI,Shashkin VI,Danil'tsev VM // NANOTECHNOLOGY. - 2000. - V. 11, l. 4. - P. 406-410.

ISSN/EISSN:

0957-4484 / нет данных

Type:

Article; Proceedings Paper

Abstract:

The weak-localization correction to the conductivity in coupled double-quantum-well structures is studied both experimentally and theoretically. The statistics of closed paths has been obtained from the analysis of magnetic field and temperature dependences of negative magnetoresistance for a magnetic field perpendicular and parallel to the structure plane. The comparison of experimental data with the results of computer simulation of carrier motion over two 2D layers with scattering shows that inter-layer transitions play a decisive role in the weak localization.

Author keywords:

нет данных

DOI:

10.1088/0957-4484/11/4/343

Web of Science ID:

ISI:000165958500044

Соавторы в МНС:

Другие поля

Поле	Значение
Month	DEC
Note	8th International Symposium on Nanostructures: Physics and Technology, ST PETERSBURG, RUSSIA, JUN 19-23, 2000
Organization	Ioffe Inst
Publisher	IOP PUBLISHING LTD
Address	DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND
Language	English
Research-Areas	Science \& Technology - Other Topics; Materials Science; Physics
Web-of-Science-Categories	Nanoscience \& Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied
ResearcherID-Numbers	Minkov, Grigory/K-3855-2013
ORCID-Numbers	Minkov, Grigory/0000-0001-8090-5309
Number-of-Cited-References	10
Journal-ISO	Nanotechnology
Doc-Delivery-Number	384RK