New approach to the analysis of negative magnetostriction in two-dimensional structures / Min'kov GM,Negashev SA,Rut OE,Germanenko AV,Khrykin OI,Shashkin VI,Danil'tsev VM // SEMICONDUCTORS. - 1999. - V. 33, l. 8. - P. 898-900.

ISSN/EISSN:

1063-7826 / нет данных

Type:

Article

Abstract:

It is shown that the Fourier transform of the negative magnetoresistance associated with the interference correction to the conductivity contains information about the distribution function of the closed trajectories with respect to their areas and about the dependence of the length of the closed trajectories on their area (L) over bar(S). On the basis of this result a method is proposed for analyzing the negative magnetoresistance. It is used to process experimental results in a two-dimensional structure with a doped barrier. It is shown that the function (L) over bar(S) in the investigated structure is largely determined by the scattering anisotropy. (C) 1999 American Institute of Physics. {[}S1063-7826(99)02108-0].

Author keywords:

MAGNETOCONDUCTANCE; MAGNETORESISTANCE; LIMIT

DOI:

10.1134/1.1187920

Web of Science ID:

ISI:000082073500021

Соавторы в МНС:

Другие поля

Поле	Значение
Month	AUG
Publisher	AMER INST PHYSICS
Address	CIRCULATION FULFILLMENT DIV, 500 SUNNYSIDE BLVD, WOODBURY, NY 11797-2999 USA
Language	English
Keywords-Plus	MAGNETOCONDUCTANCE; MAGNETORESISTANCE; LIMIT
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
ResearcherID-Numbers	Minkov, Grigory/K-3855-2013
ORCID-Numbers	Minkov, Grigory/0000-0001-8090-5309
Number-of-Cited-References	8
Usage-Count-Since-2013	2
Journal-ISO	Semiconductors
Doc-Delivery-Number	227GX