Magnetic field dependent zero-bias diffusive anomaly in Pb-oxide-n-InAS structures: Coexistence of 2D and 3D states / Minkov GM,Germanenko AV,Negachev SA,Rut OE,Sukhorukov EV // PHYSICA B-CONDENSED MATTER. - 1998. - V. 256, l. . - P. 523-526.

ISSN/EISSN:

0921-4526 / нет данных

Type:

Article; Proceedings Paper

Abstract:

The results of experimental and theoretical studies of zero-bias anomaly (ZBA) in the Pb-oxide-n-InAs tunnel structures in magnetic field up to 6 T are presented. A specific feature of the structures is a coexistence of the 2D and 3D states at the Fermi energy near the semiconductor surface. Experimentally observed magnetic field dependence of the amplitude of ZBA for different orientations of the magnetic field is in agreement with the proposed theoretical model. According to this model, electrons tunnel into 2D states, and move diffusively in 2D layer, whereas the main contribution to the screening comes from 3D electrons. (C) 1998 Elsevier Science B.V. All rights reserved.

Author keywords:

tunneling; electron-electron interaction; zero-bias anomaly ELECTRON

DOI:

10.1016/S0921-4526(98)00554-7

Web of Science ID:

ISI:000077775900108

Соавторы в МНС:

Другие поля

Поле	Значение
Month	DEC
Note	13th International Conference on High Magnetic Fields in Semiconductor Physics, UNIV NIJMEGEN, NIJMEGEN, NETHERLANDS, AUG 10-14, 1998
Publisher	ELSEVIER SCIENCE BV
Address	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Language	English
Keywords-Plus	ELECTRON
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
Author-Email	grig-ori.minkov@usu.ru
ResearcherID-Numbers	Minkov, Grigory/K-3855-2013
ORCID-Numbers	Minkov, Grigory/0000-0001-8090-5309
Number-of-Cited-References	11
Journal-ISO	Physica B
Doc-Delivery-Number	152KE