Weak localization and intersubband transitions in delta-doped GaAs / Min'kov GM,Negashev SA,Rut OE,Germanenko AV,Valyaev VV,Gurtovoi VL // SEMICONDUCTORS. - 1998. - V. 32, l. 12. - P. 1299-1303.

ISSN/EISSN:

1063-7826 / нет данных

Type:

Article

Abstract:

The negative magnetoresistance in delta-doped GaAs is investigated experimentally. It is shown for highly perfect structures that the value of the prefactor in the expression for the negative magnetoresistance significantly exceeds the theoretical value for a two-dimensional film with a single filled size-quantized subband. The role of a large number of filled subbands and intersubband transitions is discussed. It is shown that the symmetry of the wave functions and the scattering potential in delta-doped layers can cause the times of interband transitions between subbands with different parity (tau(i,j)) to be greater than the phase-relaxation time of the wave function (t(phi)). Such a relation between tau(i,j) and tau(phi) should be manifested as a significant increase in the prefactor. (C) 1998 American Institute of Physics. {[}S1063-7826(98)00912-0].

Author keywords:

QUANTUM-WELLS; ELECTRON-GAS; MAGNETORESISTANCE; LAYERS

DOI:

10.1134/1.1187618

Web of Science ID:

ISI:000077764200009

Соавторы в МНС:

Другие поля

Поле	Значение
Month	DEC
Publisher	AMER INST PHYSICS
Address	CIRCULATION FULFILLMENT DIV, 500 SUNNYSIDE BLVD, WOODBURY, NY 11797-2999 USA
Language	English
Keywords-Plus	QUANTUM-WELLS; ELECTRON-GAS; MAGNETORESISTANCE; LAYERS
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
ResearcherID-Numbers	Minkov, Grigory/K-3855-2013
ORCID-Numbers	Minkov, Grigory/0000-0001-8090-5309
Number-of-Cited-References	20
Usage-Count-Since-2013	2
Journal-ISO	Semiconductors
Doc-Delivery-Number	152EX