Many-body effects and electron tunneling in metal-insulator-p-type semiconductor structures / Min'kov GM,Germanenko AV,Rut OE // SEMICONDUCTORS. - 1998. - V. 32, l. 9. - P. 957-959.

ISSN/EISSN:

1063-7826 / нет данных

Type:

Article

Abstract:

Investigation of the tunneling conductivity sigma(d)(V) of structures made on a highly doped, narrow-gap p-type semiconductor HgCdTe reveals an abrupt increase in this quantity at voltages corresponding to the start of tunneling into the conduction band. It is shown that the observed functions sigma(d)(V) cannot be described in the framework of a model based on single-particle tunneling. It is proposed that the abrupt increase in sigma(d)(V) is attributable to tunneling into exciton states. (C) 1998 American Institute of Physics. {[}S1063-7826(98)01109-0].

Author keywords:

нет данных

DOI:

10.1134/1.1187523

Web of Science ID:

ISI:000076193200011

Соавторы в МНС:

Другие поля

Поле	Значение
Month	SEP
Publisher	AMER INST PHYSICS
Address	CIRCULATION FULFILLMENT DIV, 500 SUNNYSIDE BLVD, WOODBURY, NY 11797-2999 USA
Language	English
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
ResearcherID-Numbers	Minkov, Grigory/K-3855-2013
ORCID-Numbers	Minkov, Grigory/0000-0001-8090-5309
Number-of-Cited-References	5
Usage-Count-Since-2013	1
Journal-ISO	Semiconductors
Doc-Delivery-Number	124QL