LANDAU-LEVELS OF 2D STATES LOCALIZED IN THE SURFACE QUANTUM-WELL OF GAPLESS HGCDTE FROM TUNNELING SPECTROSCOPY / MINKOV GM,GERMANENKO AV,LARIONOVA VA,RUT OE // SEMICONDUCTOR SCIENCE AND TECHNOLOGY. - 1995. - V. 10, l. 12. - P. 1578-1584.

ISSN/EISSN:

0268-1242 / нет данных

Type:

Article

Abstract:

The energy spectrum of two-dimensional electron states localized in the surface quantum well in gapless p-HgCdTe is investigated by tunnelling spectroscopy in a quantizing magnetic field. We observe two types of tunnelling conductivity oscillation in a magnetic field, which arise from the density of 2D states oscillations at the energies E(F) and E(F) + eV, where E(F) is the semiconductor Fermi level and V the voltage applied to the semiconductor electrode. To interpret the experimental data the energy spectrum of such a system in a magnetic field and tunnelling probabilities are calculated. It is shown that two situations take place in our experimental conditions: either one or both spin states are localized in the surface quantum well in dependence on the applied bias and magnetic field. The calculation shows a large difference between the probabilities of tunnelling into different spin states. This explains why the spin splitting of the oscillations is not observed in our experiments.

Author keywords:

MAGNETIC-FIELD; SEMICONDUCTOR; SUBBANDS; LAYERS

DOI:

10.1088/0268-1242/10/12/005

Web of Science ID:

ISI:A1995TJ50800005

Соавторы в МНС:

Другие поля

Поле	Значение
Month	DEC
Publisher	IOP PUBLISHING LTD
Address	TECHNO HOUSE, REDCLIFFE WAY, BRISTOL, ENGLAND BS1 6NX
Language	English
Keywords-Plus	MAGNETIC-FIELD; SEMICONDUCTOR; SUBBANDS; LAYERS
Research-Areas	Engineering; Materials Science; Physics
Web-of-Science-Categories	Engineering, Electrical \& Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter
ResearcherID-Numbers	Minkov, Grigory/K-3855-2013 Larionova, Viola/B-3171-2015
ORCID-Numbers	Minkov, Grigory/0000-0001-8090-5309 Larionova, Viola/0000-0002-2132-5176
Number-of-Cited-References	21
Usage-Count-Since-2013	1
Journal-ISO	Semicond. Sci. Technol.
Doc-Delivery-Number	TJ508