SPIN-DEPENDENT TUNNELING IN METAL-INSULATOR GAPLESS SEMICONDUCTOR STRUCTURES IN A MAGNETIC-FIELD / GERMANENKO AV,KRUZHAEV VV,MINKOV GM,RUMYANTSEV EL,RUT OE // SEMICONDUCTOR SCIENCE AND TECHNOLOGY. - 1993. - V. 8, l. 3. - P. 383-387.

ISSN/EISSN:

0268-1242 / нет данных

Type:

Article

Abstract:

Experimental investigations of tunnelling conductivity oscillations of metal-insulator-gapless semiconductor p-Hg1-xCdxTe (x < 0. 16) structures were performed. It was revealed that when the magnetic field turns from H parallel-to n (n, normal to the surface) the amplitudes of low-bias (i.e. connected with tunnelling into `a' states) maxima decrease monotonically and for H perpendicular-to n oscillation those due to tunnelling only into `b' states are observed. Theoretical analysis shows that in gapless semiconductors with a spectrum described by the Luttinger Hamiltonian the behaviour of `a' and `b' states near the surface is different and significantly distinct from that in semiconductors with a non-degenerate band. As a result the `b' states are `attracted' to the surface and this leads to the larger contribution of these states to the tunnelling current when H perpendicular-to n.

Author keywords:

нет данных

DOI:

10.1088/0268-1242/8/3/013

Web of Science ID:

ISI:A1993KR62000013

Соавторы в МНС:

Другие поля

Поле	Значение
Month	MAR
Publisher	IOP PUBLISHING LTD
Address	TECHNO HOUSE, REDCLIFFE WAY, BRISTOL, ENGLAND BS1 6NX
Language	English
Research-Areas	Engineering; Materials Science; Physics
Web-of-Science-Categories	Engineering, Electrical \& Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter
ResearcherID-Numbers	Minkov, Grigory/K-3855-2013
ORCID-Numbers	Minkov, Grigory/0000-0001-8090-5309
Number-of-Cited-References	9
Journal-ISO	Semicond. Sci. Technol.
Doc-Delivery-Number	KR620