Electron transport effects in the IR photoconductivity of InGaAs/GaAs structures with quantum dots / Danil'tsev VM,Drozdov MN,Moldavskaya LD,Shashkin VI,Germanenko AV,Min'kov GM,Sherstobitov AA // TECHNICAL PHYSICS LETTERS. - 2004. - V. 30, l. 9. - P. 795-798.

ISSN/EISSN:

1063-7850 / нет данных

Type:

Article

Abstract:

We have studied the temperature dependence of the Hall effects in multilayer selectively doped InGaAs/GaAs heterostructures with quantum dots (QDs). It was found that structures possessing photoconductivity in the IR range exhibit a sharp (nearly exponential) growth of the conductivity and Hall mobility in the temperature interval from 8 to 30 K at a virtually constant Hall coefficient and electron density. A new mechanism of the lateral photoconductivity in the structures with QDs is proposed which is related to the change in the electron mobility in the two-dimensional channel as a result of a decrease in the Coulomb scattering on charged QDs. (C) 2004 MAIK ``Nauka / Interperiodica{''}.

Author keywords:

LATERAL CARRIER TRANSPORT; INFRARED PHOTODETECTORS; LAYER; (IN

DOI:

10.1134/1.1804599

Web of Science ID:

ISI:000224131300029

Соавторы в МНС:

Другие поля

Поле	Значение
Publisher	AMER INST PHYSICS
Address	CIRCULATION \& FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
Language	English
Keywords-Plus	LATERAL CARRIER TRANSPORT; INFRARED PHOTODETECTORS; LAYER; (IN
Research-Areas	Physics
Web-of-Science-Categories	Physics, Applied
Author-Email	lmd@ipm.sci-nnov.ru
ResearcherID-Numbers	Minkov, Grigory/K-3855-2013 Sherstobitov, Andrey/K-3838-2013
ORCID-Numbers	Minkov, Grigory/0000-0001-8090-5309 Sherstobitov, Andrey/0000-0001-9267-4181
Number-of-Cited-References	17
Usage-Count-Since-2013	2
Journal-ISO	Tech. Phys. Lett.
Doc-Delivery-Number	857PR