Study of the characteristics of photoresistors based on hydrochemically deposited films of Pb0.902Sn0.098Se solid solution / Mukhamedzyanov H. N.,Markov V. F.,Maskaeva L. N. // SEMICONDUCTORS. - 2013. - V. 47, l. 4. - P. 574-578.

ISSN/EISSN:

1063-7826 / 1090-6479

Type:

Article

Abstract:

Experimental samples of photoresistors based on a Pb0.902Sn0.098Se-solid solution semiconductor films obtained by the layer-by-layer deposition of individual selenides of lead and tin(II) with subsequent thermal activation are developed. The structure and morphology of the thin-film compositions (SnSe-PbSe)(2) are studied. The temperature dependences of the dark resistance, signal, noise and its ratio, as well as the frequency and spectral characteristics of photoresistors fabricated on the basis of Pb0.902Sn0.098Se films in the range of 205-300 K are studied. The optimal bias voltages are determined. It is shown that the location of the maximum and the right boundary of the photoresponse for Pb0.902Sn0.098Se-based photoresistors is shifted, in comparison with PbSe, toward the long-wavelength region by 0.7 mu m. The maximal detectivity of the studied photoresistors (2.0 x 2.0 mm) obtained at 230 K was 9 x 10(9) cm W-1 Hz(1/2). The advantages of using the Pb0.902Sn0.098Se-based photoresistors in the spectral range of 3.0-5.5 mu m compared with PbSe-based ones are shown.

Author keywords:

CRYSTALS

DOI:

10.1134/S1063782613040179

Web of Science ID:

ISI:000318285600018

Соавторы в МНС:

Другие поля

Поле	Значение
Month	APR
Publisher	MAIK NAUKA/INTERPERIODICA/SPRINGER
Address	233 SPRING ST, NEW YORK, NY 10013-1578 USA
Language	English
EISSN	1090-6479
Keywords-Plus	CRYSTALS
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
Author-Email	newage@isnet.ru
Number-of-Cited-References	22
Usage-Count-Last-180-days	3
Usage-Count-Since-2013	21
Journal-ISO	Semiconductors
Doc-Delivery-Number	135JY