Interband mixing between two-dimensional states localized in a surface quantum well and heavy-hole states of the valence band in a narrow-gap semiconductor / Larionova VA,Germanenko AV // PHYSICAL REVIEW B. - 1997. - V. 55, l. 19. - P. 13062-13065.

ISSN/EISSN:

1098-0121 / нет данных

Type:

Article

Abstract:

Theoretical calculations in the framework of the Kane model have been carried out in order to elucidate the role of interband mixing in forming the energy spectrum of two-dimensional carriers, localized in a surface quantum well in a narrow-gap semiconductor. Of interest was the mixing between two-dimensional (2D) states and heavy-hole states in the volume of a semiconductor. It has been shown that the interband mixing results in two effects: the broadening of 3D energy levels and their shift, which are mostly pronounced for semiconductors with high doping levels. The interband mixing has been found to mostly influence the effective mass of 2D carriers when the concentration of 2D carriers is large. whereas it slightly changes the subband distribution in a wide concentration range.

Author keywords:

INVERSION-LAYERS; SUBBANDS; HGCDTE; TRANSITION; HG1-XCDXTE

DOI:

10.1103/PhysRevB.55.13062

Web of Science ID:

ISI:A1997XC40400046

Соавторы в МНС:

Другие поля

Поле	Значение
Month	MAY 15
Publisher	AMERICAN PHYSICAL SOC
Address	ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA
Language	English
Keywords-Plus	INVERSION-LAYERS; SUBBANDS; HGCDTE; TRANSITION; HG1-XCDXTE
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
ORCID-Numbers	Larionova, Viola/0000-0002-2132-5176
Number-of-Cited-References	19
Usage-Count-Since-2013	1
Journal-ISO	Phys. Rev. B
Doc-Delivery-Number	XC404