DETERMINATION OF THE DEFORMATION POTENTIAL CONSTANTS OF HGCDTE / GERMANENKO AV,LARIONOVA VA // SOVIET PHYSICS SEMICONDUCTORS-USSR. - 1990. - V. 24, l. 10. - P. 1099-1101.

ISSN/EISSN:

0038-5700 / нет данных

Type:

Article

Abstract:

An experimental investigation was made of the Hall effect in a narrow-gap semiconductor n-type Hg(1-x)Cd(x)Te (x = 0.168 +/- 0.001) with an uncompensated donor concentration N(A) - N(D) = 1 X 10(14) cm-3 at temperatures 4.2-100 K under uniaxial pressures chi up to 4.5 kbar and subjected to magnetic fields up to 1 kOe. An analysis of the pressure dependences of the Hall coefficient in the intrinsic conduction region yielded the deformation potential constants d = -3.5 +/- 0.4 eV and b = -0.8 +/- 0.2 eV.

Author keywords:

UNIAXIAL DEFORMATION; ENERGY-GAP; HGTE; HG1-XCDXTE

DOI:

нет данных

Web of Science ID:

ISI:A1990FH82200013

Соавторы в МНС:

Другие поля

Поле	Значение
Month	OCT
Publisher	AMER INST PHYSICS
Address	CIRCULATION FULFILLMENT DIV, 500 SUNNYSIDE BLVD, WOODBURY, NY 11797-2999
Language	English
Keywords-Plus	UNIAXIAL DEFORMATION; ENERGY-GAP; HGTE; HG1-XCDXTE
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
ResearcherID-Numbers	Larionova, Viola/B-3171-2015
ORCID-Numbers	Larionova, Viola/0000-0002-2132-5176
Number-of-Cited-References	11
Usage-Count-Since-2013	1
Doc-Delivery-Number	FH822