Retardation of recrystallization in the TiC-SiCsystem / Podkovyrkin MI,Kartashov VV // REFRACTORIES AND INDUSTRIAL CERAMICS. - 2004. - V. 45, l. 1. - P. 16-18.

ISSN/EISSN:

1083-4877 / нет данных

Type:

Article

Abstract:

Silicon carbide. introduced into titanium carbide matrix via gas-phase mass transfer and subsequent deposition in the intergranular contact zone, acts as a shield for TiC grains. This results in a sharp retardation of the collective recrystallization and thus provides a means of controlling formation of the composite ceramic microstructure under sintering and hot-pressing conditions. By varying the composition and processing parameters in the TiC - SiC system, one can control the microstructure of ceramic materials to optimize theirelectrophysical and physicomechanical properties.

Author keywords:

нет данных

DOI:

10.1023/B:REFR.0000023345.6978

Web of Science ID:

ISI:000222925000004

Соавторы в МНС:

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Другие поля

Поле	Значение
Month	JAN-FEB
Publisher	CONSULTANTS BUREAU
Address	233 SPRING ST, NEW YORK, NY 10013 USA
Language	English
Research-Areas	Materials Science
Web-of-Science-Categories	Materials Science, Ceramics
Number-of-Cited-References	7
Usage-Count-Since-2013	16
Journal-ISO	Refract. Ind. Ceram.
Doc-Delivery-Number	841JB