Characterization of MBE-grown AlGaN layers heavily doped using / Zhuravlev K. S.,Osinnykh I. V.,Protasov D. Yu.,Malin T. V.,Davydov V. Yu.,Smirnov A. N.,Kyutt R. N.,Spirina A. V.,Solomonov V. I. // . - 2013. - V. 10, l. 3. - P. 315-318.

ISSN/EISSN:

1862-6351 / нет данных

Type:

Proceedings Paper

Abstract:

The AlxGa1-xN layers with a wide range of AlN molar fraction (0 < x < 0.6) were grown by ammonia MBE on (0001)-oriented sapphire substrates using silane as the silicon dopant. The structural, electrical and optical properties of the layers were investigated by atomic force microscopy, X-ray diffraction, Hall, Raman, photoluminescence and cathodoluminescence measurements. It was found that doping affects surface morphology, dislocation density and luminescence intensity of the AlxGa1-xN layers. A sharp decrease of the luminescence intensity for the heavily doped GaN and Al0.3Ga0.7N layers was explained by enhancement of the nonradiative recombination rate in degenerate GaN layers and by an increase in the defect concentration in AlGaN layers. (C) 2013 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim

Author keywords:

AlGaN; molecular beam epitaxy; silane; luminescence MOLECULAR-BEAM EPITAXY; LIGHT-EMITTING-DIODES; YELLOW LUMINESCENCE; GAN; NITRIDE; BAND

DOI:

10.1002/pssc.201200703

Web of Science ID:

ISI:000317290800008

Соавторы в МНС:

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Другие поля

Поле	Значение
Editor	Toropov, A and Ivanov, S
Booktitle	PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3
Series	Physica Status Solidi C-Current Topics in Solid State Physics
Note	4th International Symposium on Growth of III-Nitrides (ISGN), Saint-Petersburg, RUSSIA, JUL 16-19, 2012
Organization	Russian Acad Sci, Ioffe Phys-Tech Inst; Riber; Aixtron; Komef; U S Army Foward Element Commmand Atlantic; Off Naval Res Sci \& Technol; SemiTEq; Veeco; Optogan LED Solut; Crystal IS
Publisher	WILEY-V C H VERLAG GMBH
Address	PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY
Language	English
Keywords-Plus	MOLECULAR-BEAM EPITAXY; LIGHT-EMITTING-DIODES; YELLOW LUMINESCENCE; GAN; NITRIDE; BAND
Research-Areas	Materials Science; Physics
Web-of-Science-Categories	Materials Science, Multidisciplinary; Physics, Condensed Matter
Author-Email	igor-osinnykh@nlstar.com
ResearcherID-Numbers	Davydov, Valery/E-6060-2010 Smirnov, Alexander/B-4718-2013
ORCID-Numbers	Davydov, Valery/0000-0002-5255-9530
Funding-Acknowledgement	Ministry of Education and Science {[}11.519.11.6037]; RFBR {[}10-02-00077, 10-08-01263, 12-02- 00930, 12-02-00453]
Funding-Text	This work was supported by the Ministry of Education and Science (contract 11.519.11.6037), by RFBR under grants Nos. 10-02-00077, 10-08-01263, 12-02- 00930 and 12-02-00453. Some of the experiments were carried out using facilities and under the support of CKP NANOSTRUKTURY.
Number-of-Cited-References	18
Usage-Count-Since-2013	19
Doc-Delivery-Number	BEM01