SPODUMENE AND GARNET LUMINESCENCE EXCITED BY SUBNANOSECOND ELECTRON BEAMS / Baksht E. Kh,Burachenko A. G.,Solomonov V. I.,Tarasenko V. F. // RUSSIAN PHYSICS JOURNAL. - 2011. - V. 54, l. 6. - P. 634-638.

ISSN/EISSN:

1064-8887 / нет данных

Type:

Article

Abstract:

Pulsed cathodoluminescence of spodumene and yttrium-aluminum garnet crystals activated by Mn(2+) and Nd(3+) ions, respectively, is investigated. The luminescence was excited upon crystal irradiation by electron beams with current densities of 35 and 100 A/cm(2) and average electron energy of similar to 50 keV for 0.1, 0.25, and 0.65 ns. It is demonstrated that the electron beam duration decreased to several tenth of a nanosecond does not lead to essential changes of the mechanisms of pulsed cathodoluminescence excitation and character of its spectrum, but in this case, the intensity of luminescence of the hole centers increases compared with the intracenter luminescence.

Author keywords:

pulse cathodoluminescence; subnanosecond electron beam EXCITATION; CRYSTALS

DOI:

нет данных

Web of Science ID:

ISI:000297545200003

Соавторы в МНС:

—

Другие поля

Поле	Значение
Month	OCT
Publisher	SPRINGER
Address	233 SPRING ST, NEW YORK, NY 10013 USA
Language	English
Keywords-Plus	EXCITATION; CRYSTALS
Research-Areas	Physics
Web-of-Science-Categories	Physics, Multidisciplinary
Author-Email	VFT@loi.hcei.tsc.ru
ResearcherID-Numbers	Tarasenko, Victor/P-1748-2014
Funding-Acknowledgement	Siberian Branch of the Russian Academy of Sciences with the Ural Branch of the Russian Academy of Sciences; Presidium of the Ural Branch of the Russian Academy of Sciences
Funding-Text	This work was supported in part by the Integration Project of the Siberian Branch of the Russian Academy of Sciences with the Ural Branch of the Russian Academy of Sciences ``High-Current Discharges in Gases and Development of Electrophysical Devices on Their Basis{''} and by the Presidium of the Ural Branch of the Russian Academy of Sciences under the Program ``Investigation of Luminescent and Lasing Properties of Wide-Band Semiconductors and Doped Dielectrics.{''}
Number-of-Cited-References	12
Usage-Count-Since-2013	1
Journal-ISO	Russ. Phys. J.
Doc-Delivery-Number	855DZ