Luminescence study of neodymium-doped yttrium aluminates / Osipov V. V.,Solomonov V. I.,Spirina A. V. // JOURNAL OF OPTICAL TECHNOLOGY. - 2011. - V. 78, l. 6. - P. 408-412.

ISSN/EISSN:

1070-9762 / нет данных

Type:

Article

Abstract:

This paper presents the results of a study of the pulsed cathodoluminescence of samples of neodymium-doped yttrium aluminates. It is found that the d-f emission bands of the Nd(3+) ion dominate the spectrum of yttrium aluminum garnet in the visible region. The relative intensities and widths of the d-f bands vary as the crystal structure changes, and new luminescence bands appear. The luminescence bands of Nd(3+) in the yttrium aluminum garnet and orthorhombic yttrium monoaluminate structures are identified. It is proposed to use two regions of the emission bands of Nd(3+) in yttrium aluminum garnet as analytical bands to determine the concentration of the cubic phase: those at gimel(1) = 350-500 nm and gimel(2) = 501-650 nm. (C) 2011 Optical Society of America.

Author keywords:

PULSED CATHODOLUMINESCENCE; GARNET; CERAMICS; LASER; ND

DOI:

нет данных

Web of Science ID:

ISI:000292812300014

Соавторы в МНС:

—

Другие поля

Поле	Значение
Month	JUN
Publisher	OPTICAL SOC AMER
Address	2010 MASSACHUSETTS AVE NW, WASHINGTON, DC 20036 USA
Language	English
Keywords-Plus	PULSED CATHODOLUMINESCENCE; GARNET; CERAMICS; LASER; ND
Research-Areas	Optics
Web-of-Science-Categories	Optics
Author-Email	rasuleva@iep.uran.ru
Funding-Acknowledgement	Presidium of the Russian Academy of Sciences; Ural Branch of the Russian Academy of Sciences; Ural Branch; Siberian Branch of the Russian Academy of Sciences ``Study of the luminescence and lasing properties of broad-band semiconductors and doped dielectrics.{''}
Funding-Text	This work was carried out as part of the program of the Presidium of the Russian Academy of Sciences and of the Ural Branch of the Russian Academy of Sciences ``New optical materials{''} and the program of the Ural Branch and the Siberian Branch of the Russian Academy of Sciences ``Study of the luminescence and lasing properties of broad-band semiconductors and doped dielectrics.{''}
Number-of-Cited-References	16
Usage-Count-Since-2013	5
Journal-ISO	J. Opt. Technol.
Doc-Delivery-Number	793HX