Variations of high-pressure thermoelectric and mechanical properties of Si single crystals under doping with N and P-T pre-treatment / Shchennikov Jr.,Ovsyannikov Sergey V.,Shchennikov Vladimir V.,Shaidarova Nadezhda A.,Misiuk Andrzej,Smirnov Sergey V.,Yang Deren // MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING. - 2007. - V. 462, l. 1-2, SI. - P. 347-350.

ISSN/EISSN:

0921-5093 / нет данных

Type:

Article; Proceedings Paper

Abstract:

A set of Czochralski-grown Si (Cz-Si) single crystals doped with nitrogen N and P-T pre-treated has been characterized using thermoelectric power measurements at room temperature under ultrahigh pressure P (0-20 GPa). A pressure value of the semiconductor-metal phase transition was established and observed to increase under doping with nitrogen. The influences are discussed of both N doping and P-T pre-treatment conditions on the properties of Cz-Si. A correlation has been established between the transition pressure and the concentration of residual interstitial oxygen O-i always present in Cz-Si. The contraction of samples' thickness under pressure was compared with the data of microindentation. Both mechanical properties exhibited anomalies near the direct structural phase transition into the body-centred tetragonal lattice (beta-Sn). (C) 2006 Elsevier B.V. All rights reserved.

Author keywords:

nitrogen-doped Si; high pressure; phase transitions; thermoelectric power (Seebeck coefficient); mechanical properties; microindentation CZOCHRALSKI-GROWN SILICON; OXYGEN PRECIPITATION; PHASE-TRANSITIONS; POWER; NITROGEN; WAFERS; FILMS; GAAS; GPA

DOI:

10.1016/j.msea.2006.05.176

Web of Science ID:

ISI:000247038300066

Соавторы в МНС:

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Другие поля

Поле	Значение
Month	JUL 25
Note	International Symposium on Physics of Materials (ISPMA), Prague, CZECH REPUBLIC, AUG 30-SEP 02, 2005
Organization	Charles Univ, Dept Metal Phys
Publisher	ELSEVIER SCIENCE SA
Address	PO BOX 564, 1001 LAUSANNE, SWITZERLAND
Language	English
Keywords-Plus	CZOCHRALSKI-GROWN SILICON; OXYGEN PRECIPITATION; PHASE-TRANSITIONS; POWER; NITROGEN; WAFERS; FILMS; GAAS; GPA
Research-Areas	Science \& Technology - Other Topics; Materials Science; Metallurgy \& Metallurgical Engineering
Web-of-Science-Categories	Nanoscience \& Nanotechnology; Materials Science, Multidisciplinary; Metallurgy \& Metallurgical Engineering
Author-Email	sergey\_v\_o@imp.uran.ru
ResearcherID-Numbers	Smirnov, Sergey/D-5460-2016 Ovsyannikov, Sergey/J-7802-2012 Shchennikov, Vladimir/J-8533-2013 yang, deren/J-3311-2012
ORCID-Numbers	Smirnov, Sergey/0000-0002-2083-5377 Ovsyannikov, Sergey/0000-0003-1027-0998 Shchennikov, Vladimir/0000-0003-2887-1652 yang, deren/0000-0002-1745-2105
Number-of-Cited-References	25
Usage-Count-Since-2013	7
Journal-ISO	Mater. Sci. Eng. A-Struct. Mater. Prop. Microstruct. Process.
Doc-Delivery-Number	175UA