Phonon focusing and temperature dependences of thermal conductivity of silicon nanofilms / Kuleyev I. I.,Bakharev S. M.,Kuleyev I. G.,Ustinov V. V. // JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS. - 2015. - V. 120, l. 4. - P. 638-650.

ISSN/EISSN:

1063-7761 / 1090-6509

Type:

Article

Abstract:

The effect of phonon focusing on the anisotropy and temperature dependences of the thermal conductivities of silicon nanofilms is analyzed using the three-mode Callaway model. The orientations of the film planes and the directions of the heat flux for maximal or minimal heat removal from silicon chip elements at low temperatures, as well as at room temperature, are determined. It is shown that in the case of diffuse reflection of phonons from the boundaries, the plane with the \{100\} orientation exhibits the lowest scattering ability (and the highest thermal conductivity), while the plane with the \{111\} orientation is characterized by the highest scattering ability (and the lowest thermal conductivity). The thermal conductivity of wide films is determined to a considerable extent by the orientation of the film plane, while for nanowires with a square cross section, the thermal conductivity is mainly determined by the direction of the heat flux. The effect of elastic energy anisotropy on the dependences of the thermal conductivity on the geometrical parameters of films is analyzed. The temperatures of transition from boundary scattering to bulk relaxation mechanisms are determined.

Author keywords:

BOUNDARY SCATTERING REGIME; SINGLE-CRYSTALS; ANISOTROPY; TRANSPORT; LAYERS; MODEL; GE

DOI:

10.1134/S1063776115020144

Web of Science ID:

ISI:000355216500008

Соавторы в МНС:

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Другие поля

Поле	Значение
Month	APR
Publisher	MAIK NAUKA/INTERPERIODICA/SPRINGER
Address	233 SPRING ST, NEW YORK, NY 10013-1578 USA
Language	English
EISSN	1090-6509
Keywords-Plus	BOUNDARY SCATTERING REGIME; SINGLE-CRYSTALS; ANISOTROPY; TRANSPORT; LAYERS; MODEL; GE
Research-Areas	Physics
Web-of-Science-Categories	Physics, Multidisciplinary
Author-Email	kuleev@imp.uran.ru
ResearcherID-Numbers	Bakharev, Sergey/K-1733-2013 Kuleyev, Igor/K-2899-2013 Ustinov, Vladimir/G-7501-2011 Kuleyev, Ivan/K-1742-2013
ORCID-Numbers	Bakharev, Sergey/0000-0003-2956-8145 Kuleyev, Igor/0000-0001-7182-4558 Ustinov, Vladimir/0000-0002-5155-7947 Kuleyev, Ivan/0000-0001-9428-6502
Funding-Acknowledgement	Physics Department of the Russian Academy of Sciences {[}12-T-2-1018]; Program in Support of Leading Scientific Schools {[}NSh-14.120.14.1540]
Funding-Text	This study was carried out in accordance with the ``Spin{''} program of the Russian Academy of Sciences with the support of the Program of the Physics Department of the Russian Academy of Sciences (grant no. 12-T-2-1018), as well as the Program in Support of Leading Scientific Schools (grant no. NSh-14.120.14.1540).
Number-of-Cited-References	40
Usage-Count-Since-2013	6
Journal-ISO	J. Exp. Theor. Phys.
Doc-Delivery-Number	CJ1BL