Colossal magnetoresistance of the inhomogeneous ferromagnetic semiconductor HgCr2Se4 / Solin N. I.,Ustinov V. V.,Naumov S. V. // PHYSICS OF THE SOLID STATE. - 2008. - V. 50, l. 5. - P. 901-908.

ISSN/EISSN:

1063-7834 / нет данных

Type:

Article

Abstract:

A new method is described for attaining high magnetoresistance in inhomogeneous magnetic materials, which makes use of the formation of a depleted layer and a contact potential difference at the interface separating two semiconductors with different Fermi levels and the magnetic-field-induced variation in the contact potential difference and thickness of the interface layer. The proposed model of the magnetoresistive structure is realized on the basis of the HgCr2Se4 magnetic semiconductor. Layers of n-HgCr2Se4 up to a few tens of microns thick were prepared on the surface of p-HgCr2Se4 bulk single crystals by the diffusion technique. Application of a magnetic field stimulated in the structures a strong (by a factor of more than 200) increase of the current flowing through the n-layer.

Author keywords:

N-TYPE CDCR2SE4; GIANT MAGNETORESISTANCE; MAGNETIC SEMICONDUCTOR; TRANSPORT; FIELDS; RESISTIVITY; ALLOYS; KOE; EUO

DOI:

10.1134/S1063783408050168

Web of Science ID:

ISI:000255877400016

Соавторы в МНС:

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Другие поля

Поле	Значение
Month	MAY
Publisher	MAIK NAUKA/INTERPERIODICA/SPRINGER
Address	233 SPRING ST, NEW YORK, NY 10013-1578 USA
Language	English
Keywords-Plus	N-TYPE CDCR2SE4; GIANT MAGNETORESISTANCE; MAGNETIC SEMICONDUCTOR; TRANSPORT; FIELDS; RESISTIVITY; ALLOYS; KOE; EUO
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
Author-Email	solin@imp.uran.ru
ResearcherID-Numbers	Naumov, Sergey/J-8492-2013 Ustinov, Vladimir/G-7501-2011 Solin, Nikolay/K-2920-2013
ORCID-Numbers	Naumov, Sergey/0000-0003-4527-6396 Ustinov, Vladimir/0000-0002-5155-7947 Solin, Nikolay/0000-0002-0932-877X
Number-of-Cited-References	29
Usage-Count-Last-180-days	1
Usage-Count-Since-2013	22
Journal-ISO	Phys. Solid State
Doc-Delivery-Number	301DU